• Chinese Journal of Quantum Electronics
  • Vol. 18, Issue 2, 103 (2001)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Measuring Effective Stimulated Emission Cross-sections of Nd:YVO4 Crystals by the Theory of LD End-Dumped Solid-state Lasers Wang Zhengping(State Key Laboratory of Crystal[J]. Chinese Journal of Quantum Electronics, 2001, 18(2): 103 Copy Citation Text show less
    References

    [1] Fields R A, Bimbaum M, Fincher C L.High efficiency Nd:YVO4 diode-laser end-pumped laser [J]. Appl. Phys.Lett., 1987, 51(23):1885~1886

    [2] Brown D C, Nelson R, Billings L. Efficient CW end-pumped, end-cooled Nd:YVO4diode-pumped laser [J]. Appl. Opt., 1997, 36(33): 8611~8613

    [3] Scheps R, Myers J F, Mizell G. High-efficiency 1.06μm output in a monolithicNd:YVO4 laser [J]. Appl. Opt.,1994,33(24): 5546~5549

    [6] Fan T Y, Byer R L. Diode laser-pumped solid-state lasers [J]. IEEE J. QuantumElectron., 1988, 24(6): 895~912

    [7] Hwang I H, Meador W E. An analytical model for longitudinally pumpedcontinuous-wave laser [J]. J. Appl. Phys.,1992, 72(7): 2556~2561

    [8] Risk W P. Modeling of longitudinally pumped solid-state lasers exhibitingreabsorption losses [J]. Opt. Soc. Am.,1988, 5(7): 1412~1423

    [9] Laporta P, Brussard M. Design criteria for mode size optimization in diode-pumpedsolid-state lasers [J]. IEEE. J.Quant. Electron., 1991, QE-27(10): 2319~2326

    [10] CASIX. Inc., Crystals &Materials (Fuzhou, China, 1995)

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Measuring Effective Stimulated Emission Cross-sections of Nd:YVO4 Crystals by the Theory of LD End-Dumped Solid-state Lasers Wang Zhengping(State Key Laboratory of Crystal[J]. Chinese Journal of Quantum Electronics, 2001, 18(2): 103
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