Measuring Effective Stimulated Emission Cross-sections of Nd:YVO4 Crystals by the Theory of LD End-Dumped Solid-state Lasers Wang Zhengping（State Key Laboratory of Crystal

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 18 >Issue 2 >Page 103 > Article

Chinese Journal of Quantum Electronics
Vol. 18, Issue 2, 103 (2001)

Measuring Effective Stimulated Emission Cross-sections of Nd:YVO4 Crystals by the Theory of LD End-Dumped Solid-state Lasers Wang Zhengping（State Key Laboratory of Crystal

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Measuring Effective Stimulated Emission Cross-sections of Nd:YVO4 Crystals by the Theory of LD End-Dumped Solid-state Lasers Wang Zhengping（State Key Laboratory of Crystal[J]. Chinese Journal of Quantum Electronics, 2001, 18(2): 103 Copy Citation Text

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Abstract

The theory of LDend-pumped solid-state lasers is analyzed, and a method that measures the effectivestimulated emission cross-section σe of laser crystal is ascertained. We compare the threshold andslope efficiency of four Nd:YVO4crystals which have different doping levels,and calculate the σeof these crystals with upper-level life-times that have measured by us. Our results showthat the 1.9at% Nd:YVO4crystal has a σeTe of 18.3 μscm2which is largest in all the four samples.

Keywords

doping level effective stimulated emission cross-section LD end-pumped solid-state lasers Nd:YVO4 crystal

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