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    Journals >Journal of Semiconductors >Volume 40 >Issue 9 >Page 091101 > Article
    • Journal of Semiconductors
    • Vol. 40, Issue 9, 091101 (2019)
    Some recent advances in ab initio calculations of nonradiative decay rates of point defects in semiconductors
    Linwang Wang
    Author Affiliations
  • Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
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    DOI: 10.1088/1674-4926/40/9/091101 Cite this Article
    Linwang Wang. Some recent advances in ab initio calculations of nonradiative decay rates of point defects in semiconductors[J]. Journal of Semiconductors, 2019, 40(9): 091101 Copy Citation Text show less
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    Linwang Wang. Some recent advances in ab initio calculations of nonradiative decay rates of point defects in semiconductors[J]. Journal of Semiconductors, 2019, 40(9): 091101
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