• Acta Photonica Sinica
  • Vol. 50, Issue 10, 1004001 (2021)
Tiansheng ZHONG, Shunjie YU, Xiaolong ZHAO*, Mengfan DING, Fangzhou LIANG, Shi FANG, Zhongfang ZHANG, Xiaohu HOU, Haiding SUN, Guangwei XU, Qin HU, and Shibing LONG*
Author Affiliations
  • School of Microelectronics,University of Science and Technology of China,Hefei 230026,China
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    DOI: 10.3788/gzxb20215010.1004001 Cite this Article
    Tiansheng ZHONG, Shunjie YU, Xiaolong ZHAO, Mengfan DING, Fangzhou LIANG, Shi FANG, Zhongfang ZHANG, Xiaohu HOU, Haiding SUN, Guangwei XU, Qin HU, Shibing LONG. High-performance Solar-blind and X-ray Detector Based on Ultra-thin Gallium Oxide Film Grown by MOCVD(Invited)[J]. Acta Photonica Sinica, 2021, 50(10): 1004001 Copy Citation Text show less
    Growth and characterization of 70 nm Ga2O3 film
    Fig. 1. Growth and characterization of 70 nm Ga2O3 film
    Schematic and spectral response of the MSM Ga2O3 PD
    Fig. 2. Schematic and spectral response of the MSM Ga2O3 PD
    I-V characteristic curves of MSM Ga2O3 PD
    Fig. 3. I-V characteristic curves of MSM Ga2O3 PD
    Various parameters as a function of different light intensities and voltages
    Fig. 4. Various parameters as a function of different light intensities and voltages
    I-t curve and respond time of MSM Ga2O3 PD under different conditions
    Fig. 5. I-t curve and respond time of MSM Ga2O3 PD under different conditions
    X-ray response test of MSM Ga2O3 PD
    Fig. 6. X-ray response test of MSM Ga2O3 PD
    MaterialMethod

    Thickness

    d/nm

    PDCR

    (PDCR/d)/

    nm-1

    R/

    (A·W-1

    R/d)/

    (A·W-1·nm-1

    D*/JonesD*/d)/(Jones·nm-1Ref.

    β-Ga2O3

    film

    MOCVD705.5×1077.9×10572.21.034.7×10156.7×1013This work

    ε-Ga2O3

    film

    MOCVD1 0001.7×1051702300.231.2×10151.2×101218

    ε-Ga2O3

    film

    MOCVD5081.8×104350.510-31.67×10133.3×101019

    β-Ga2O3

    Nanowire

    HVPE8009.4×103120.11.53×10-44.4×10115.5×10820
    β-Ga2O3 filmmist CVD6001.5×1052.5×10222 00036.671.1×10161.8×101310
    β-Ga2O3 filmmist CVD5001052×1021500.3N/AN/A9
    β-Ga2O3 filmPLD3832.5×10370.38.62×10-4N/AN/A8
    β-Ga2O3 micro-flakePLD3001.9×10361.75.67×10-33.7×10101.2×10-229
    β-Ga2O3 filmRFMS2001055×10252.60.26N/AN/A23
    Cr-doped Ga2O3 flakesMF1428×1055634.8×1053.38×1036.7×10144.7×101224
    β-Ga2O3MF2806×1062.1×1042.6×1039.289.7×10133.5×101122
    β-Ga2O3 filmMF804.566×10-21.8×10522507.1×10119×10921
    β-Ga2O3 microwireMF1074.1×1044.1×10-31.3×10-21.3×10-99.4×10119.4×10414
    Table 1. Performance of Ga2O3 SBUV PD grown by different methods
    Material

    Thickness

    d/μm

    Sensitivity

    S/(μC·cm-2·Gy-1

    S/d)/

    (μC·cm-3·Gy-1

    X-ray energy/keVRef.
    β-Ga2O37×10-21.91×1042.72×10960This work
    amorphous Ga2O30.256.772.71×1054034
    ε-Ga2O30.41.9×1044.75×1083042
    β-Ga2O3:Mg1 000338.93.40×1031635
    MAPbBr32 00080400505
    CH3NH3PbI30.61.525 000843
    α-Se200201 0002031
    CsPbBr31 00017.71772.544
    Cs2AgBiBr6100404 000<4545
    GaN3560.175303
    Table 2. Equivalent thickness sensitivity of different X-ray detectors
    Tiansheng ZHONG, Shunjie YU, Xiaolong ZHAO, Mengfan DING, Fangzhou LIANG, Shi FANG, Zhongfang ZHANG, Xiaohu HOU, Haiding SUN, Guangwei XU, Qin HU, Shibing LONG. High-performance Solar-blind and X-ray Detector Based on Ultra-thin Gallium Oxide Film Grown by MOCVD(Invited)[J]. Acta Photonica Sinica, 2021, 50(10): 1004001
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