• Infrared and Laser Engineering
  • Vol. 51, Issue 6, 20210640 (2022)
Renjie Ruan1、2、3, Yinhua Cao1、2、3, Xiaofan Wang1、2、3, Yanhong Ma1、2、3, Zhiyong Wang1、2、3, and Tian Lan1、2、3、*
Author Affiliations
  • 1Beijing Engineering Research Center of Laser Technology, Beijing University of Technology, Beijing 100124, China
  • 2Key Laboratory of Trans-scale Laser Manufacturing Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • 3Institute of Advanced Technology on Semiconductor Optics & Electronics, Department of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
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    DOI: 10.3788/IRLA20210640 Cite this Article
    Renjie Ruan, Yinhua Cao, Xiaofan Wang, Yanhong Ma, Zhiyong Wang, Tian Lan. Design of on-chip dot array structured light projector using bottom-emitting VCSEL[J]. Infrared and Laser Engineering, 2022, 51(6): 20210640 Copy Citation Text show less
    Schematic diagram of existing dot array structured light projector
    Fig. 1. Schematic diagram of existing dot array structured light projector
    Schematic diagram of on-chip dot array structured light projector
    Fig. 2. Schematic diagram of on-chip dot array structured light projector
    Dot array coded pattern
    Fig. 3. Dot array coded pattern
    Simulation results under different sampling ratio
    Fig. 4. Simulation results under different sampling ratio
    Output light intensity distribution of structure-1
    Fig. 5. Output light intensity distribution of structure-1
    Comparison diagram of evaluation index under different sampling ratio
    Fig. 6. Comparison diagram of evaluation index under different sampling ratio
    Evaluation index under different oxide apertures
    Fig. 7. Evaluation index under different oxide apertures
    Evaluation index under different thickness of substrate
    Fig. 8. Evaluation index under different thickness of substrate
    Simulation results under the optimized design parameters
    Fig. 9. Simulation results under the optimized design parameters
    ParameterValue
    Wavelength,λ/nm 980
    Length of target light field,Lx/m 0.01
    Width of target light field,Ly/m 0.01
    Waist radius of VCSEL,w0/μm 2
    Distance from oxide aperture to DOE,z/μm 505
    Thickness of substrate,L/μm 500
    Refractive index of GaAs,n3.52
    Horizontal sampling ratio,M-
    Longitudinal sampling ratio,N-
    Table 1. Structural parameters used in structure-2
    Renjie Ruan, Yinhua Cao, Xiaofan Wang, Yanhong Ma, Zhiyong Wang, Tian Lan. Design of on-chip dot array structured light projector using bottom-emitting VCSEL[J]. Infrared and Laser Engineering, 2022, 51(6): 20210640
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