Jinjing Huang, Jun Liu. A complete small-signal HBT model including AC current crowding effect[J]. Journal of Semiconductors, 2021, 42(5): 052401
- Journal of Semiconductors
- Vol. 42, Issue 5, 052401 (2021)
Fig. 1. Complete small-signal equivalent circuit of HBT device including
Fig. 2. Small-signal equivalent circuit after de-embedding the extrinsic parameters.
Fig. 3. Final circuit after T-π transformation.
Fig. 4. Frequency of F 0 versus ω 2.
Fig. 5. S -parameters comparisons in the frequency range from 100 MHz to 20 GHz under the biasing condition: (a) Bias1 (V ce = 1 V, I b = 15 μ A), (b) Bias2 (V ce = 1 V, I b = 30 μ A), (c) Bias3 (V ce = 3 V, I b = 17.5 μ A).
Fig. 6. (a) Plot of C bi versus I b. (b) Plot of C bi versus V ce.
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Table 1. The initial extraction and optimization results of the HBT under Bias1 (V ce = 1 V, I b = 15 μ A) and Bias3 (V ce = 3 V, I b = 17.5 μ A). Error = |Extracted – Optimized| / Extracted × 100%.
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Table 2. The accuracy of S -parameters versus frequency.
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