Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes

Yipeng Liang; Jianping Liu; Masao Ikeda; Aiqin Tian; Renlin Zhou; Shuming Zhang; Tong Liu; Deyao Li; Liqun Zhang; Hui Yang

doi:10.1088/1674-4926/40/5/052802

Journals >Journal of Semiconductors >Volume 40 >Issue 5 >Page 052802 > Article

Journal of Semiconductors
Vol. 40, Issue 5, 052802 (2019)

Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes

Yipeng Liang^1,2,3, Jianping Liu^1,2,3, Masao Ikeda^2,3, Aiqin Tian^2,3..., Renlin Zhou^1,2,3, Shuming Zhang^1,2,3, Tong Liu⁴, Deyao Li^2,3, Liqun Zhang^2,3 and Hui Yang^1,2,3|Show fewer author(s)

Author Affiliations

¹School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China

²Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou 215123, China

³Key Laboratory of Nanodevices and Applications, Chinese of Academy of Science, Suzhou 215123, China

⁴Vacuum Interconnected Nanotech Workstation (NANO-X), Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

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DOI: 10.1088/1674-4926/40/5/052802 Cite this Article

Yipeng Liang, Jianping Liu, Masao Ikeda, Aiqin Tian, Renlin Zhou, Shuming Zhang, Tong Liu, Deyao Li, Liqun Zhang, Hui Yang. Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes[J]. Journal of Semiconductors, 2019, 40(5): 052802 Copy Citation Text

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