• Journal of Semiconductors
  • Vol. 40, Issue 5, 052802 (2019)
Yipeng Liang1,2,3, Jianping Liu1,2,3, Masao Ikeda2,3, Aiqin Tian2,3..., Renlin Zhou1,2,3, Shuming Zhang1,2,3, Tong Liu4, Deyao Li2,3, Liqun Zhang2,3 and Hui Yang1,2,3|Show fewer author(s)
Author Affiliations
  • 1School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China
  • 2Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou 215123, China
  • 3Key Laboratory of Nanodevices and Applications, Chinese of Academy of Science, Suzhou 215123, China
  • 4Vacuum Interconnected Nanotech Workstation (NANO-X), Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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    DOI: 10.1088/1674-4926/40/5/052802 Cite this Article
    Yipeng Liang, Jianping Liu, Masao Ikeda, Aiqin Tian, Renlin Zhou, Shuming Zhang, Tong Liu, Deyao Li, Liqun Zhang, Hui Yang. Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes[J]. Journal of Semiconductors, 2019, 40(5): 052802 Copy Citation Text show less

    Abstract

    The inhomogeneous broadening parameter and the internal loss of green LDs are determined by experiments and theoretical fitting. It is found that the inhomogeneous broadening plays an important role on the threshold current density of green LDs. The green LD with large inhomogeneous broadening even cannot lase. Therefore, reducing inhomogeneous broadening is a key issue to improve the performance of green LDs.
    $ {E_{\rm v}} = \frac{{{\hbar ^2} {k^2}}}{{2{m_{\rm v}}}}, $ (1)

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    $ {E_{\rm c}} = \frac{{{\hbar ^2} {k^2}}}{{2 {m_{\rm c}}}}, $ (2)

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    $ {f_{\rm v}} = \frac{1}{{1 + \exp \left(\frac{{{E_{\rm v}} - {F_{\rm v}}}}{{{k_{\rm b}}T}}\right)}}, $ (3)

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    $ {f_{\rm c}} = \frac{1}{{1 + \exp \left(\frac{{{E_{\rm c}} - {F_{\rm c}}}}{{{k_{\rm b}}T}}\right)}}, $ (4)

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    $ {\rho _{\rm c}} = \frac{{{m_{\rm c}}}}{{\pi {\hbar ^2}}}, $ (5)

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    $ {\rho _{\rm v}} = \frac{{{m_{\rm v}}}}{{\pi {\hbar ^2}}}. $ (6)

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    $ {F_{\rm c}} = {k_{\rm b}}T\cdot \log \left[ \exp \left(\frac{n}{{{\rho _{\rm c}} {k_{\rm b}}}}\right) - 1\right], $ (7)

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    $ {F_{\rm v}} = {k_{\rm b}}T \cdot \log \left[ \exp \left(\frac{n}{{{\rho _{\rm v}} {k_{\rm b}}}}\right) - 1\right]. $ (8)

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    $ {G_{\hom }}(\omega ) = \frac{C}{{\pi {\gamma _{\hom }}}}\int_{{E_{\rm g}}}^\infty {({f_{\rm c}} + {f_{\rm v}} - 1){\rm{Sech} }\left(\frac{{\omega ' - \omega }}{{{\gamma _{\hom }}}}\right)} {\rm d}w', $ (9)

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    $ C = \frac{{\pi {e^2}}}{{{n_{\rm ref}}{c_{\rm vac}}{\varepsilon _0}m_0^2}} \frac{{{m_{\rm r}}}}{{\pi {\hbar ^2}}}M_{\rm b}^2, $ (10)

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    $ G_{\rm ihom}(\omega ) \!=\! \frac{C}{{\sqrt {2\pi } {\gamma _{{\rm ihom }}}}}\int {{G_{\hom }}(\omega ')} \exp \left[-\;{\left(\frac{{\omega '-\omega }}{{{\gamma _{{\rm ihom }}}}}\right)^2}\right]{\rm d}\omega ', $ (11)

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    $ g = {\mathit\Gamma} G_{\rm ihom } - \alpha _{\rm i}, $ (12)

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    Yipeng Liang, Jianping Liu, Masao Ikeda, Aiqin Tian, Renlin Zhou, Shuming Zhang, Tong Liu, Deyao Li, Liqun Zhang, Hui Yang. Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes[J]. Journal of Semiconductors, 2019, 40(5): 052802
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