High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films

Jianhua Zhao

doi:10.1088/1674-4926/41/8/080201

Journals >Journal of Semiconductors >Volume 41 >Issue 8 >Page 080201 > Article

Journal of Semiconductors
Vol. 41, Issue 8, 080201 (2020)

High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films

Jianhua Zhao

DOI: 10.1088/1674-4926/41/8/080201 Cite this Article

Jianhua Zhao. High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. Journal of Semiconductors, 2020, 41(8): 080201 Copy Citation Text

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Jianhua Zhao. High Curie temperature ferromagnetism and high hole mobility in tensile strained Mn-doped SiGe thin films[J]. Journal of Semiconductors, 2020, 41(8): 080201

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