Progress in Semiconductor Saturable Absorption Mirror Mode-Locked Laser

Ting Huang; Nan Lin; Qiuyue Zhang; Tianjiang He; Cong Xiong; Li Zhong; Suping Liu; Xiaoyu Ma

doi:10.3788/LOP231330

Journals >Laser & Optoelectronics Progress >Volume 61 >Issue 9 >Page 0900008 > Article

Laser & Optoelectronics Progress
Vol. 61, Issue 9, 0900008 (2024)

Progress in Semiconductor Saturable Absorption Mirror Mode-Locked Laser

Ting Huang^1、2, Nan Lin^1、*, Qiuyue Zhang^1、2, Tianjiang He^1、2, Cong Xiong¹, Li Zhong^1、2, Suping Liu¹, and Xiaoyu Ma^1、2

Author Affiliations

¹National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductor, Chinese Academy of Science, Beijing 100083, China

²College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.3788/LOP231330 Cite this Article Set citation alerts

Ting Huang, Nan Lin, Qiuyue Zhang, Tianjiang He, Cong Xiong, Li Zhong, Suping Liu, Xiaoyu Ma. Progress in Semiconductor Saturable Absorption Mirror Mode-Locked Laser[J]. Laser & Optoelectronics Progress, 2024, 61(9): 0900008 Copy Citation Text

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Fig. 1. Principle diagram of SESAM mode-locking^[6]. (a) Bitemporal absorption response; (b) pulse of SESAM mode-locking laser

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Comparison of SESAM structures[13,17]. (a) The structure diagrams of resonance (solid line) and anti-resonance (dashed line); (b) the reflectance diagrams of resonance (solid line) and anti-resonance (dashed line); (c) the structure diagrams of enhanced SESAM

Fig. 2. Comparison of SESAM structures^[13,17]. (a) The structure diagrams of resonance (solid line) and anti-resonance (dashed line); (b) the reflectance diagrams of resonance (solid line) and anti-resonance (dashed line); (c) the structure diagrams of enhanced SESAM

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SESAM	Saturation fluence F_sat /（μJ/cm²）	Modulation depth ΔR /%	Nonsaturable loss ΔR_ns /%	Inverse saturable absorption F₂ /（μJ/cm²）	Damage fluence F_d /（mJ/cm²）	Corresponding saturation parameter S
NTC	72	2.05	0.04	3200	32.6	452
SCTC	279	0.52	0.01	5523	44.1	157
DTC2	168	0.71	0.02	31700	122	726
DTC3	247	0.43	0.04	346000	>210	>850

Table 1. Nonlinear parameters of the different tested SESAMs, measured damage thresholds F_d and corresponding saturation parameter S^[20]

SESAM	Saturation fluence F_sat /（μJ/cm²）	Modulation depth ΔR /%	Nonsaturable loss ΔR_ns /%	Inverse saturable absorption F₂ /（μJ/cm²）	Reflectivity rollover fluence F₀ /（μJ/cm²）	Damage fluence F_d /（μJ/cm²）	Recovery time τ_1/e /ps
1×3 SQW	120	1.1	0.10	6.0	3.9	64	67
6×1 SCQW	174	1.0	0.14	10	5.8	112	15
8×1 SCQW	334	1.3	0.14	9.0	8.2	108	17
4×2 SCQW	246	1.2	0.18	9.2	7.0	88	12

Table 2. Measured nonlinear parameters, damage threshold, and recovery time^[22]

Year	Reference	Gain material	Wavelength /nm	Pulse width /fs	Average power /W	Repetition rate /MHz	Peak power /W	Energy /μJ
2000	［33］	Yb∶YAG	1030	730	16.2	34.6	57.5	0.47
2003	［34］	Yb∶YAG	1030	810	60	34.3	1.9×10⁶	1.75
2012	［35］	Yb∶LuScO₃	1040	96	5.1	77.5
2012	［41］	Yb∶YAG	1030	583	25.6×10^-3	16.3	275	16.9
2012	［42］	Yb∶YAG	1030	1100	35×10^-3	3.5	145	41
2012	［43］	Yb∶SSO	1036	298	3.5×10^-3	27	27.8	1
2012	［44］	Yb∶CALGO	1043	300 197 135	3.8×10^-3 4×10^-3 0.2×10^-3	21 21 45	28 20 1.3	1.3 0.9 0.03
2012	［45］	Yb∶CALGO	1050	94	12.5	80	1.5×10⁶	0.15
2013	［36］	Yb∶CALGO	1051	62	5.1	65	44×10⁶	0.08
2014	［37］	Yb∶Lu₂O₃ /Yb∶Sc₂O₃	1038	103	1.4	41.7
2014	［38］	Yb∶YAG	1030	1070	242	3.0	66×10⁶	80
2017	［46］	Yb∶Lu₂O₃		498 260	58 16	11.2 47.2	9.2×10⁶ 100×10⁶
2018	［47］	Yb∶YAG	1030	580	120	13.4	13.6	9
2018	［48］	Yb∶YAG	1030	970	125	78	1.45×10⁶	1.6
2018	［49］	Yb∶YAG	1030	780	210	10.9	54×10⁶	19
2019	［39］	Yb∶YAG	1030	940	350	8.9	37×10⁶	39
2020	［40］	Ho∶YAG	2090	371	3.66	24	96	0.15
2021	［50］	Ho∶YAG	2050	1660	40.5	52.2	209	0.78×10⁶
2022	［51］	Ho∶YAG	2100	1130	50	23.6	1.9×10⁶	2.11

Table 3. Development of recent SESAM mode-locked thin disk lasers

Reference	Gain material	Wavelength /nm	Pulse width /fs	Average power /mW	Repetition rate /GHz	Peak power /W	Cavity type
［4］	QW（InGaAs）	1030	22×10³	21.6	4.4	0.2	V
［53］	QW（InGaAs）	1040	477	100	1.21	152.5	Z
［54］	QD（InAs）	958	3.3×10³	102	50	0.54	V
［55］	QD（InAs）	1060	18×10³	27.4	2.57	0.52	V
［56］	QWs（InGaAs）	1030	107	3	5.1	4.8	V
［56］	QD（InAs）	970	784	1×10³	5.4	217.4	V
［58］	QW（InGaAs）	1030	682	5.1×10³	1.7	3.85×10³	V
［59］	QWs（InGaAs）	1013	400	3.3×10³	1.67	4.35×10³	V
［60］	QW（InGaAs）	1034	96	100	1.6	560	V

Table 4. Development of SESAM mode-locked VECSEL

Reference	Gain material	Wavelength /nm	Pulse width /fs	Average power /mW	Repetition rate /GHz	Peak power /W
［26］	QD（InAs）	953	35×10³	40	2.8	0.36
［27］	QD（InAs）	959	28×10³	6.4×10³	2.47	80.2
［61］	QW（InGaAs）	968	620	101	4.8	29.9
［62］	QW（InGaAs）	964	570	127	101.2	1.9
［63］	QW（InGaAs）	1040	253	235	2.9	240
［63］	QW（InGaAs）	1040	279	310	10	97
［65］	SQW（InGaAs）	1084	184	115	4.33	127
［64］	SQW（InGaAs）	1033	144	30	2.73	70

Table 5. Development of MIXSEL

Year	Reference	Doped ion	Wavelength /nm	Pulse width /fs	Average power /mW	Repetition rate /MHz
2009	［102］	Yb³⁺	1068	910	1.7	397
2012	［103］	Yb³⁺	1064	21×10³	17	397
2016	［104］	Er³⁺	1560	440	15	9.2×10³
2016	［105］	Tm³⁺	1928	280	195	20.5
2018	［106］	Er³⁺	1550	135	45	23.5
2021	［107］	Er³⁺	1561	3.86×10³	241	4.95×10³

Table 6. Development of recent commercial SESAM mode-locked fiber lasers

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