Investigation of Surface Improvement of GaAs/Si(001) with Strain Balanced Superlattice

Jiachen Li; Jun Wang; Chunyang Xiao; Haijing Wang; Yanxing Jia; Zhuoliang Liu; Bojie Ma; Rui Ming; Qing Ge; Hao Zhai; Feng Lin; Weiyu He; Yongqing Huang; Xiaomin Ren

doi:10.3788/CJL220798

[1] Liang D, Bowers J E. Recent progress in lasers on silicon[J]. Nature Photonics, 4, 511-517(2010).

[2] Kachris C, Tomkos I. Power consumption evaluation of all-optical data center networks[J]. Cluster Computing, 16, 611-623(2013).

[3] Zhou Z P. Silicon photonics and its applications[J]. Optics & Optoelectronic Technology, 16, 6-10(2018).

[4] Lü Z R, Zhang Z K, Wang H et al. Research progress on 1.3 μm semiconductor quantum-dot lasers[J]. Chinese Journal of Lasers, 47, 0701016(2020).

[5] Zhang Z, Ning Y Q, Zhang J W et al. Design and fabrication of 1160-nm optically-pumped vertical-external-cavity surface-emitting laser[J]. Chinese Journal of Lasers, 47, 0701020(2020).

[6] Ning Y Q, Chen Y Y, Zhang J et al. Brief review of development and techniques for high power semiconductor lasers[J]. Acta Optica Sinica, 41, 0114001(2021).

[7] Helkey R, Saleh A A M, Buckwalter J et al. High-performance photonic integrated circuits on silicon[J]. IEEE Journal of Selected Topics in Quantum Electronics, 25, 8300215(2019).

[8] Ren X M, Wang Q. Novel comprehensive theoretical description of epitaxial crystal-growth modes and the prediction of “post S-K compatible-heterogeneous-growth mode”[J]. Journal of Beijing University of Posts and Telecommunications, 37, 1-5(2014).

[9] Li K S, Yang J J, Lu Y et al. Inversion boundary annihilation in GaAs monolithically grown on on-axis silicon (001)[J]. Advanced Optical Materials, 8, 2000970(2020).

[10] Li K S, Liu Z Z, Tang M C et al. O-band InAs/GaAs quantum dot laser monolithically integrated on exact (001) Si substrate[J]. Journal of Crystal Growth, 511, 56-60(2019).

[11] Zhu S, Shi B, Li Q et al. 1.5 μm quantum-dot diode lasers directly grown on CMOS-standard (001) silicon[J]. Applied Physics Letters, 113, 221103(2018).

[12] Kunert B, Mols Y, Baryshniskova M et al. How to control defect formation in monolithic Ⅲ/Ⅴ hetero-epitaxy on (100) Si? A critical review on current approaches[J]. Semiconductor Science and Technology, 33, 093002(2018).

[13] Tsuji T, Yonezu H, Ohshima N. Reduction of surface roughness of an AlAs/GaAs distributed Bragg reflector grown on Si with strained short-period superlattices[J]. Journal of Crystal Growth, 201/202, 1010-1014(1999).

[14] Shi B, Zhu S, Li Q et al. 1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si[J]. Applied Physics Letters, 110, 121109(2017).

[15] Wei W Q, Wang J H, Zhang B et al. InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm[J]. Applied Physics Letters, 113, 053107(2018).

[16] Wei W Q, Feng Q, Guo J J et al. InAs/GaAs quantum dot narrow ridge lasers epitaxially grown on SOI substrates for silicon photonic integration[J]. Optics Express, 28, 26555-26563(2020).

[17] Wei W Q, Wang J H, Zhang J Y et al. A CMOS compatible Si template with (111) facets for direct epitaxial growth of Ⅲ-Ⅴ materials[J]. Chinese Physics Letters, 37, 024203(2020).

[18] Kwoen J, Jang B, Lee J et al. All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001)[J]. Optics Express, 26, 11568-11576(2018).

[19] Wan Y T, Shang C, Norman J et al. Low threshold quantum dot lasers directly grown on unpatterned quasi-nominal (001) Si[J]. IEEE Journal of Selected Topics in Quantum Electronics, 26, 1900409(2020).

[20] Yang J J, Liu Z Z, Jurczak P et al. All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates[J]. Journal of Physics D: Applied Physics, 54, 035103(2021).

[21] Shang C, Selvidge J, Hughes E et al. A pathway to thin GaAs virtual substrate on on-axis Si (001) with ultralow threading dislocation density[J]. Physica Status Solidi (a), 218, 2000402(2021).

[22] Jung D, Callahan P G, Shin B et al. Low threading dislocation density GaAs growth on on-axis GaP/Si (001)[J]. Journal of Applied Physics, 122, 225703(2017).

[23] Samonji K, Yonezu H, Takagi Y et al. Evolution process of cross-hatch patterns and reduction of surface roughness in (InAs)m(GaAs)n strained short-period superlattices and InGaAs alloy layers grown on GaAs[J]. Journal of Applied Physics, 86, 1331-1339(1999).

[24] Matthews J W, Blakeslee A E. Defects in epitaxial multilayers: Ⅰ. misfit dislocations[J]. Journal of Crystal Growth, 27, 118-125(1974).

[25] Matthews J W, Blakeslee A E. Defects in epitaxial multilayers: Ⅱ. dislocation pile-ups, threading dislocations, slip lines and cracks[J]. Journal of Crystal Growth, 29, 273-280(1975).

[26] Matthews J W, Blakeslee A E. Defects in epitaxial multilayers: Ⅲ. preparation of almost perfect multilayers[J]. Journal of Crystal Growth, 32, 265-273(1976).

[27] Dunstan D J. Strain and strain relaxation in semiconductors[J]. Journal of Materials Science: Materials in Electronics, 8, 337-375(1997).

[28] Wang J, Liu Z L, Liu H et al. High slope-efficiency quantum-dot lasers grown on planar exact silicon (001) with asymmetric waveguide structures[J]. Optics Express, 30, 11563-11571(2022).

[29] Chen W R, Wang J, Zhu L N et al. Theoretical and experimental study on epitaxial growth of antiphase boundary free GaAs on hydrogenated on-axis Si(001) surfaces[J]. Journal of Physics D: Applied Physics, 54, 445102(2021).

[30] Wan Y, Shang C, Norman J et al. Low threshold quantum dot lasers directly grown on unpatterned quasi-nominal (001) Si[J]. IEEE Journal of Selected Topics in Quantum Electronics, 26, 1-9(2020).

[31] Dubrovskii V G[M]. Nucleation theory and growth of nanostructures(2014).

[32] Lu D C, Duan S K[M]. Fundamentals and applications of metal organic compounds vapor phase epitaxy, 125-126(2009).

[33] Scheel H J. Historical aspects of crystal growth technology[J]. Journal of Crystal Growth, 211, 1-12(2000).

[34] Hong W, Lee H N, Yoon M et al. Persistent step-flow growth of strained films on vicinal substrates[J]. Physical Review Letters, 95, 095501(2005).

[35] Markov I V[M]. Crystal growth for beginners: fundamentals of nucleation, crystal growth and epitaxy(2016).

[36] Dong H L, Sun J, Ma S F et al. Interfacial relaxation analysis of InGaAs/GaAsP strain-compensated multiple quantum wells and its optical property[J]. Superlattices and Microstructures, 114, 331-339(2018).

[37] George I, Becagli F, Liu H Y et al. Dislocation filters in GaAs on Si[J]. Semiconductor Science and Technology, 30, 114004(2015).

[38] Ratsch C, Garcia J, Caflisch R E. Influence of edge diffusion on the growth mode on vicinal surfaces[J]. Applied Physics Letters, 87, 141901(2005).