Influence of roughness on extreme ultra-violet lithography mask

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Opto-Electronic Engineering >Volume 32 >Issue 10 >Page 80 > Article

Opto-Electronic Engineering
Vol. 32, Issue 10, 80 (2005)

Influence of roughness on extreme ultra-violet lithography mask

[in Chinese]^1、2, [in Chinese]¹, [in Chinese]^1、2, and [in Chinese]¹

Author Affiliations

¹[in Chinese]

²[in Chinese]

show less

DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Influence of roughness on extreme ultra-violet lithography mask[J]. Opto-Electronic Engineering, 2005, 32(10): 80 Copy Citation Text

show less

References

[1] D.G. STEARNS. X-ray scattering from interfacial roughness in multilayer structures[J]. J.Appl.Phys,1992,71(9):4286-4298.

[2] K.M. SKULINA,C.S. ALFORD,R.M. BIONTA,et al. Molybdenum-silicon multilayer mirrors for normal incidence in the extreme ultroviolet[J]. Appl. Optics,1995,34(19):3727-3730.

[3] P.A. KEAMEY,C.E. MOORE,S.I. TAN,et al. Mask blanks of extreme ultra-violet lithography: ion beam sputter deposition of low defect density Mo/Si multilayers[J]. J.Vac.Sci. Technol. B,1997,15(6):2452-2454.

[4] Eberhard SPILLER. Soft X-Ray Optics [M]. Bellingham, Washington:SPIE Optical Engineering Press,1994. 110-114.

[5] Weilun CHAO,Eric GULLIKSON,David ATTWOOD. Equivalent multilayer bandwidth and comparison between 13.4nm and 14.4nm for EUV throughput calculation[J]. SPIE,2001,4343:676-683.

[6] M. BUJAK,S. BURKHART,C. CERJAN,et al. Mask technology for EUV lithography[J]. SPIE,1999,3665:30-39.

CLP Journals

[1] MIAO Hua, CHEN Yu, SONG Yulong, WANG Wensheng. Automatic Recognition Technology of Partial Masked Target[J]. Acta Photonica Sinica, 2013, 42(8): 997

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Influence of roughness on extreme ultra-violet lithography mask[J]. Opto-Electronic Engineering, 2005, 32(10): 80

Download Citation

Tools

Save the article for my favorites

Paper Information