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    Journals >Chinese Journal of Lasers >Volume 48 >Issue 24 >Page 2403001 > Article
    • Chinese Journal of Lasers
    • Vol. 48, Issue 24, 2403001 (2021)
    Influence of Diffusion Barriers with Different Al Compositions on Impurity-Free Vacancy Induced Quantum Well Mixing
    Naling Zhang1、2, Hongqi Jing1、*, Qinghe Yuan1、2, Li Zhong1, Suping Liu1, and Xiaoyu Ma1、2
    Author Affiliations
  • 1National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.3788/CJL202148.2403001 Cite this Article Set citation alerts
    Naling Zhang, Hongqi Jing, Qinghe Yuan, Li Zhong, Suping Liu, Xiaoyu Ma. Influence of Diffusion Barriers with Different Al Compositions on Impurity-Free Vacancy Induced Quantum Well Mixing[J]. Chinese Journal of Lasers, 2021, 48(24): 2403001 Copy Citation Text show less
    Epitaxial structure of 975 nm semiconductor laser. (a) Sample 1; (b) sample 2
    Fig. 1. Epitaxial structure of 975 nm semiconductor laser. (a) Sample 1; (b) sample 2
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    Influence of annealing temperature on wavelength blue shift
    Fig. 2. Influence of annealing temperature on wavelength blue shift
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    Influence of annealing temperature on PL spectral intensity. (a) Sample 1; (b) sample 2
    Fig. 3. Influence of annealing temperature on PL spectral intensity. (a) Sample 1; (b) sample 2
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    Influence of annealing time on quantum well mixing. (a) Influence on wavelength blue shift; (b) influence on PL spectral intensity
    Fig. 4. Influence of annealing time on quantum well mixing. (a) Influence on wavelength blue shift; (b) influence on PL spectral intensity
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    Concentrations of In atoms under different diffusion lengths
    Fig. 5. Concentrations of In atoms under different diffusion lengths
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    Abstract
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    References (24)
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    Naling Zhang, Hongqi Jing, Qinghe Yuan, Li Zhong, Suping Liu, Xiaoyu Ma. Influence of Diffusion Barriers with Different Al Compositions on Impurity-Free Vacancy Induced Quantum Well Mixing[J]. Chinese Journal of Lasers, 2021, 48(24): 2403001
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    Paper Information
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