Influence of Diffusion Barriers with Different Al Compositions on Impurity-Free Vacancy Induced Quantum Well Mixing

Naling Zhang; Hongqi Jing; Qinghe Yuan; Li Zhong; Suping Liu; Xiaoyu Ma

doi:10.3788/CJL202148.2403001

Journals >Chinese Journal of Lasers >Volume 48 >Issue 24 >Page 2403001 > Article

Chinese Journal of Lasers
Vol. 48, Issue 24, 2403001 (2021)

Influence of Diffusion Barriers with Different Al Compositions on Impurity-Free Vacancy Induced Quantum Well Mixing

Naling Zhang^1、2, Hongqi Jing^1、*, Qinghe Yuan^1、2, Li Zhong¹, Suping Liu¹, and Xiaoyu Ma^1、2

Author Affiliations

¹National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.3788/CJL202148.2403001 Cite this Article Set citation alerts

Naling Zhang, Hongqi Jing, Qinghe Yuan, Li Zhong, Suping Liu, Xiaoyu Ma. Influence of Diffusion Barriers with Different Al Compositions on Impurity-Free Vacancy Induced Quantum Well Mixing[J]. Chinese Journal of Lasers, 2021, 48(24): 2403001 Copy Citation Text

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