• Laser & Optoelectronics Progress
  • Vol. 56, Issue 19, 192501 (2019)
Xinmei Wang1、*, Huihui Wang2, Lini Zhang2, Pengchong Duan2, and Wanli Jia2
Author Affiliations
  • 1Faculty of Automation and Information Engineering, Xi'an University of Technology, Xi'an, Shaanxi 710048, China
  • 2Faculty of Sciences, Xi'an University of Technology, Xi'an, Shaanxi 710048, China
  • show less
    DOI: 10.3788/LOP56.192501 Cite this Article Set citation alerts
    Xinmei Wang, Huihui Wang, Lini Zhang, Pengchong Duan, Wanli Jia. Design of 10-kV Vertical Double-Diffused Insulted-Gate Photoconductive Semiconductor Switch[J]. Laser & Optoelectronics Progress, 2019, 56(19): 192501 Copy Citation Text show less
    Device structure and equivalent circuit model of VDIG-PCSS. (a) Structure of one cell; (b) equivalent circuit
    Fig. 1. Device structure and equivalent circuit model of VDIG-PCSS. (a) Structure of one cell; (b) equivalent circuit
    Schematic of space-charge region distribution of VDIG-PCSS in static state
    Fig. 2. Schematic of space-charge region distribution of VDIG-PCSS in static state
    Simulation models of VDIG-PCSS and traditional PCSS. (a) VDIG type; (b) traditional type
    Fig. 3. Simulation models of VDIG-PCSS and traditional PCSS. (a) VDIG type; (b) traditional type
    Electric potential distribution of VDIG-PCSS at various bias voltages
    Fig. 4. Electric potential distribution of VDIG-PCSS at various bias voltages
    Comparison of volt-ampere characteristic curves of VDIG-PCSS and traditional PCSS
    Fig. 5. Comparison of volt-ampere characteristic curves of VDIG-PCSS and traditional PCSS
    Electric field distribution of VDIG-PCSS in static state when bias voltage is 10 kV (cutline at x=10 μm)
    Fig. 6. Electric field distribution of VDIG-PCSS in static state when bias voltage is 10 kV (cutline at x=10 μm)
    Pulse waveforms of gate voltage and laser for triggering VDIG-PCSS
    Fig. 7. Pulse waveforms of gate voltage and laser for triggering VDIG-PCSS
    Comparison of transient output characteristics of VDIG-PCSS and traditional PCSS
    Fig. 8. Comparison of transient output characteristics of VDIG-PCSS and traditional PCSS
    Influences of laser beam diameter on photocurrent waveform of VDIG-PCSS
    Fig. 9. Influences of laser beam diameter on photocurrent waveform of VDIG-PCSS
    RegionDoping concentration/cm-3Depth/μm
    n+1×10180.3(y1)
    p-2×10162
    p+1×10175(y2)
    n-1×101550(y3)
    SI1×107950
    Table 1. Parameters for device simulation
    Xinmei Wang, Huihui Wang, Lini Zhang, Pengchong Duan, Wanli Jia. Design of 10-kV Vertical Double-Diffused Insulted-Gate Photoconductive Semiconductor Switch[J]. Laser & Optoelectronics Progress, 2019, 56(19): 192501
    Download Citation