[1] P YAO, H WU, B GAO et al. Fully hardware-implemented memristor convolutional neural network. Nature, 641(2020).
[2] G ZHOU, Z REN, L WANG et al. Resistive switching memory integrated with amorphous carbon-based nanogenerators for self-powered device. Nano Energy, 63: 103793(2019).
[3] B SUN, L WEI, H LI et al. White-light-controlled ferromagnetic and ferroelectric properties of multiferroic single-crystalline BiFeO3 nanoflowers at room temperature. J. Mater. Chem. C, 7547(2014).
[4] G ZHOU, Z REN, L WANG et al. Artificial and wearable albumen protein memristor arrays with integrated memory logic gate functionality. Mater. Horiz., 1877(2019).
[5] W XU, S MIN, H HWANG et al. Organic core-sheath nanowire artificial synapses with femtojoule energy consumption. Sci. Adv., 1501350(2016).
[6] B GAO, Y BI, H CHEN et al. Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems. ACS Nano, 6998(2014).
[7] C DU, W MA, T CHANG et al. Biorealistic implementation of synaptic functions with oxide memristors through internal ionic dynamics. Adv. Funct. Mater., 4290(2015).
[8] J YANG, D STRUKOV, D STEWART et al. Memristive devices for computing. Nat. Nanotechnol., 13(2013).
[9] T CHANG, Y YANG, W LU. Building neuromorphic circuits with memristive devices. IEEE Circ. Syst. Mag., 56(2013).
[10] D KUZUM, S YU, H WONG. Synaptic electronics: materials, devices and applications. Nanotechnology, 382001(2013).
[11] J BORGHETTI, G SNIDER, P KUEKES et al. Memristive switches enable stateful logic operations via material implication. Nature, 873(2010).
[12] H K HE, R YANG, J XIA et al. High-uniformity memristor arrays based on two-dimensional MoTe2 for neuromorphic computing. Journal of Inorganic Materials, 795(2022).
[13] Y TIAN, X J ZHU, C SUN et al. Intrinsically stretchable threshold switching memristor for artificial neuron implementations. Journal of Inorganic Materials, 413(2023).
[14] F ZHOU, Z ZHOU, J CHEN et al. Optoelectronic resistive random access memory for neuromorphic vision sensors. Nat. Nanotechnol., 776(2019).
[15] J JIANG, W HU, D XIE et al. 2D electric-double-layer phototransistor for photoelectronic and spatiotemporal hybrid neuromorphic integration. Nanoscale, 1360(2019).
[16] Q DUAN, Z JING, X ZOU et al. Spiking neurons with spatiotemporal dynamics and gain modulation for monolithically integrated memristive neural networks. Nat. Commun., 3399(2020).
[19] J LU, Y LI, Z XUAN et al. One transistor one electrolyte-gated transistor for supervised learning in SNNs. IEEE Electron Device Letters, 296(2021).
[20] Y ZHONG, J TANG, X LI et al. Dynamic memristor-based reservoir computing for high-efficiency temporal signal processing. Nat. Commun., 408(2021).
[21] L SUN, Z WANG, J JIANG et al. In-sensor reservoir computing for language learning via two-dimensional memristors. Sci. Adv., eabg14565(2021).
[22] C PAN, C WANG, S LIANG et al. Reconfigurable logic and neuromorphic circuits based on electrically tunable two-dimensional homojunctions. Nat. Electron., 383(2020).
[23] H CHEN, X XUE, C LIU et al. Logic gates based on neuristors made from two-dimensional materials. Nat. Electron., 399(2021).
[24] W WANG, G ZHOU, Y WANG et al. An analogue memristor made of silk fibroin polymer. J. Mater. Chem. C, 14583(2021).
[25] N HE, Y SUN, D WEN et al. Synaptic behavior of Ni-Co layered double hydroxide-based memristor. Appl. Phys. Lett., 173503(2021).
[26] Z WANG, H XU, X LI et al. Synaptic learning and memoryfunctions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO memristor. Adv. Funct. Mater., 2759(2012).
[27] L ZHANG, H TAO, C HOLT et al. A critical window for cooperation and competition among developing retinotectal synapses. Nature, 37(1998).
[28] F ALIBART, L GAO, B HOSKINS et al. High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm. Nanotechnology, 075201(2012).
[29] S YU, Y WU, R JEYASINGH et al. An electronic synapse device based on metal oxide resistive switching memory for neuromorphic computation. IEEE Trans. Electron Devices, 2729(2011).
[30] W WANG, G ZHOU, Y WANG et al. Multiphotoconductance levels of the organic semiconductor of polyimide-based memristor induced by interface charges. J. Phys. Chem. Lett., 9941(2022).
[31] B YAN, D KUANG, W WANG et al. Investigation of multi-photoconductance state induced by light-sensitive defect in TiOx-based memristor. Appl. Phys. Lett., 253506(2022).
[32] G ZHOU, B SUN, X HU et al. Negative photoconductance effect: an extension function of the TiOx-based memristor. Adv. Sci., 2003765(2021).
[33] X HU, W WANG, B SUN et al. Refining the negative differential resistance effect in a TiOx-based memristor. J. Phys. Chem. Lett., 5377(2021).
[34] G ZHOU, S DUAN, P LI et al. Coexistence of negative differential resistance and resistive switching memory at room temperature in TiOx modulated by moisture. Adv. Electron. Mater., 1700567(2018).
[35] G ZHOU, Z WANG, B SUN et al. Volatile and nonvolatile memristive devices for neuromorphic computing. Adv. Electron. Mater., 2101127(2022).
[36] G ZHOU, X JI, J LI et al. Second-order associative memory circuit hardware implemented by the evolution from battery-like capacitance to resistive switching memory. iScience, 105240(2022).
[37] B SUN, G ZHOU, T GUO et al. Biomemristors as the next generation bioelectronics. Nano Energy, 75: 104938(2020).
[38] G ZHOU, X YANG, L XIAO et al. Investigation of a submerging redox behavior in Fe2O3 solid electrolyte for resistive switching memory. Appl. Phys. Lett., 163506(2019).
[39] G ZHOU, B SUN, Y YAO et al. Investigation of the behaviour of electronic resistive switching memory based on MoSe2-doped ultralong Se microwires. Appl. Phys. Lett., 143904(2016).
[40] P LIN, C LI, Z WANG et al. Three-dimensional memristor circuits as complex neural networks. Nat. Electron., 225(2020).
[41] Z WANG, H WU, G BURR et al. Resistive switching materials for information processing. Nat. Rev. Mater., 173(2020).
[42] C LIAO, X HU, X LIU et al. Self-selective analogue FeOx-based memristor induced by the electron transport in the defect energy level. Appl. Phys. Lett., 123505(2022).
[43] B YAN, D KUANG, W WANG et al. Investigation of multi-photoconductance state induced by light-sensitive defect in TiO x-based memristor. Appl. Phys. Lett., 253506(2022).
[44] S G HU, Y LIU, T P CHEN et al. Emulating the Ebbinghaus forgetting curve of the human brain with a NiO-based memristor. Appl. Phys. Lett., 133701(2013).
[45] Y CHIOU, J GAMBINO, M MOHAMMAD. Determination of the Fowler-nordheim tunneling parameters from the Fowler-nordheim plot. Solid-State Electron., 1787(2001).
[46] S BARTH, U WOLF, H BÄSSLER et al. Current injection from a metal to a disordered hopping system. III. Comparison between experiment and Monte Carlo simulation. Phys. Rev. B, 8791(1999).
[47] R LANDAUER. Spatial variation of currents and fields due to localized scatterers in metallic conduction. IBM Journal of Research and Development, 223(1957).
[48] S SZE. Physics of Semiconductor Devices.
