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    Journals >Journal of Inorganic Materials >Volume 38 >Issue 4 >Page 437 > Article
    • Journal of Inorganic Materials
    • Vol. 38, Issue 4, 437 (2023)
    Defect-induced Analogue Resistive Switching Behavior in FeOx-based Memristor and Synaptic Paired-pulse Facilitation Feature
    Tongyu WANG1, Haofeng RAN1, and Guangdong ZHOU1,2,*
    Author Affiliations
  • 11. College of Artificial Intelligence, Southwest University, Chongqing 400715, China
  • 22. Chongqing Key Laboratory of Brain-like Computing and Intelligent Control, Southwest University, Chongqing 400715, China
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    DOI: 10.15541/jim20220721 Cite this Article
    Tongyu WANG, Haofeng RAN, Guangdong ZHOU. Defect-induced Analogue Resistive Switching Behavior in FeOx-based Memristor and Synaptic Paired-pulse Facilitation Feature [J]. Journal of Inorganic Materials, 2023, 38(4): 437 Copy Citation Text show less
    Structure and characterization of Ag/FeOx/ITO memristors
    1. Structure and characterization of Ag/FeOx/ITO memristors
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    Results of memristor characteristics of Ag/FeOx/ITO memristors
    2. Results of memristor characteristics of Ag/FeOx/ITO memristors
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    Multiconductivity testing and biological synaptic simulation
    3. Multiconductivity testing and biological synaptic simulation
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    Results of fitting the physical mechanism of Ag/FeOx/ITO memristors
    4. Results of fitting the physical mechanism of Ag/FeOx/ITO memristors
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    Physical model constructed based on trap energy level tunneling
    5. Physical model constructed based on trap energy level tunneling
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    Abstract
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    References (46)
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    Tongyu WANG, Haofeng RAN, Guangdong ZHOU. Defect-induced Analogue Resistive Switching Behavior in FeOx-based Memristor and Synaptic Paired-pulse Facilitation Feature [J]. Journal of Inorganic Materials, 2023, 38(4): 437
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    Paper Information
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