Chuan SHEN, Liao YANG, Hui-Jun GUO, Dan YANG, Lu CHEN, Li HE. Numerical simulation of high-operating-temperature MWIR HgCdTe APD detectors[J]. Journal of Infrared and Millimeter Waves, 2021, 40(5): 576
- Journal of Infrared and Millimeter Waves
- Vol. 40, Issue 5, 576 (2021)
Fig. 1. 2-D structural model of HgCdTe APD
Fig. 2. Comparison of dark current curves between experiment and numerical simulation of avalanche devices
Fig. 3. Changes of the dark current density of APD devices at different temperatures
Fig. 4. Different dark current mechanisms affecting devices at different operating temperatures (a)80K (b)100K，(c)150K，(d)200K
Fig. 5. The dark current density and gain of HgCdTe APD change with different Ni layer thickness（a）Dark current density（b）Gain
Fig. 6. The dark current density and gain of HgCdTe APD change with different doping of Ni layer（a）Dark current density（b）Gain
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Table 1. Device structure parameters involved in numerical simulation
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Table 2. Optimized Structural parameters of HOT HgCdTe APD
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