• Opto-Electronic Engineering
  • Vol. 43, Issue 1, 55 (2016)
JIANG Chunguang1、2、*, CHEN Yaqin2, LIU Tao2, XIONG Wei2, LI Guoguang2, and JI Feng1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3969/j.issn.1003-501x.2016.01.010 Cite this Article
    JIANG Chunguang, CHEN Yaqin, LIU Tao, XIONG Wei, LI Guoguang, JI Feng. All-reflective Broadband Spectroscopic Imaging Ellipsometer[J]. Opto-Electronic Engineering, 2016, 43(1): 55 Copy Citation Text show less

    Abstract

    We developed a broadband spectroscopic imaging ellipsometer, which is free of chromatic aberration, by using an all-reflective focusing optical structure with special polarization control. A calibration method by measuring multiple standard samples was employed in the system calibration procedure. By applying the obtained system calibration parameters, we can determine the test sample’s spatial distributions of ellipsometric angles ψ and σ, and the film thickness after the imaging ellipsometric analysis. To test the accuracy of our home-made imaging ellipsometer, we have measured the SiO2/Si samples with the thicknesses of 3 nm~300 nm at multiple wavelengths between 200 nm and 1 000 nm. The experimental result shows that the SiO2 film thickness can be determined within the maximum relative measurement error of 6%.
    JIANG Chunguang, CHEN Yaqin, LIU Tao, XIONG Wei, LI Guoguang, JI Feng. All-reflective Broadband Spectroscopic Imaging Ellipsometer[J]. Opto-Electronic Engineering, 2016, 43(1): 55
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