• Chinese Journal of Quantum Electronics
  • Vol. 25, Issue 1, 43 (2008)
Yun-jiang JIN*, Qing-xuan YU, Shu-jian LIU, and Yuan LIAO
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  • [in Chinese]
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    DOI: Cite this Article
    JIN Yun-jiang, YU Qing-xuan, LIU Shu-jian, LIAO Yuan. Effect of the structures on the enhancement of ultra-violet photoluminescence intensity in Ag doped ZnO film[J]. Chinese Journal of Quantum Electronics, 2008, 25(1): 43 Copy Citation Text show less

    Abstract

    Different Ag-doped ZnO and pure ZnO films on Si(100)substrates were prepared by PLD(the laser wavelengths are 1064 nm and 355 nm,respectively). The X-ray diffraction measurement indicated that the samples made by the two laser wavelengths have quite different structures. An intense enhancement of UV intensity was observed in the Ag-doped ZnO films prepared by the laser wavelength of 1064 nm after being annealed at 800℃ in oxygen,but the similar phenomenon was not detected in the Ag-doped ZnO films made by the wavelength of 355 nm after the same annealing treatment. Under detailed discussion and comparison between the structural and optical properties of Ag-doped ZnO films,it was concluded that the reason of the enhancement of UV intensity may be related to the localized surface plasmon resonance resulting from the nanoscale silver particles embedded in the Ag-doped ZnO films.
    JIN Yun-jiang, YU Qing-xuan, LIU Shu-jian, LIAO Yuan. Effect of the structures on the enhancement of ultra-violet photoluminescence intensity in Ag doped ZnO film[J]. Chinese Journal of Quantum Electronics, 2008, 25(1): 43
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