• Journal of Semiconductors
  • Vol. 42, Issue 1, 010201 (2021)
Xiaoxue Ren1, Lixiu Zhang2,3, Yongbo Yuan1, and Liming Ding2,3
Author Affiliations
  • 1Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China
  • 2Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing 100190, China
  • 3University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.1088/1674-4926/42/1/010201 Cite this Article
    Xiaoxue Ren, Lixiu Zhang, Yongbo Yuan, Liming Ding. Ion migration in perovskite solar cells[J]. Journal of Semiconductors, 2021, 42(1): 010201 Copy Citation Text show less
    (Color online) (a) Giant switchable photocurrent curve in a non-selective contact structured device. Reproduced with permission[2], Copyright 2014, Nature Publishing Group. (b) Schematic representation of ion migration in a perovskite solar cell when applying forward (left) and reverse bias (right). Reproduced with permission[2], Copyright 2014, Nature Publishing Group. (c) The possible migrating paths for I vacancies, MA vacancies, Pb vacancies and I interstitial defects. Reproduced with permission[4], Copyright 2015, The Royal Society of Chemistry. (d) Schematic diagrams indicating the influence of vacancy drift on the band energies of a p–i–n device at short circuit[3].
    Fig. 1. (Color online) (a) Giant switchable photocurrent curve in a non-selective contact structured device. Reproduced with permission[2], Copyright 2014, Nature Publishing Group. (b) Schematic representation of ion migration in a perovskite solar cell when applying forward (left) and reverse bias (right). Reproduced with permission[2], Copyright 2014, Nature Publishing Group. (c) The possible migrating paths for I vacancies, MA vacancies, Pb vacancies and I interstitial defects. Reproduced with permission[4], Copyright 2015, The Royal Society of Chemistry. (d) Schematic diagrams indicating the influence of vacancy drift on the band energies of a p–i–n device at short circuit[3].
    (Color online) (a) The 200 XRD peak of an x = 0.6 film before (black) and after (red) white-light soaking for 5 minutes at ~50 mW/cm2. XRD patterns of an x = 0.2 film (dashed green) and an x = 0.7 film (dashed brown) are included for comparison. Reproduced with permission[12], Copyright 2015, Royal Society of Chemistry. (b) Proposed mechanism of photo-induced cleaning by halide redistribution. Reproduced with permission[15], Copyright 2016, Nature Publishing Group. (c) (d) Photoluminescence enhancement and quenching mechanisms. (c) Ion dynamics in MAPbI3 thin film promoting PLIE, when the probability of I0 species encounters is small and Frenkel pair annihilation is boosted by electron trapping, and PLID (d) when the probability of I0 species encounters is high, boosting I2 molecule formation. (c/d) Reproduced with permission[16], Copyright 2019, Nature Publishing Group.
    Fig. 2. (Color online) (a) The 200 XRD peak of an x = 0.6 film before (black) and after (red) white-light soaking for 5 minutes at ~50 mW/cm2. XRD patterns of an x = 0.2 film (dashed green) and an x = 0.7 film (dashed brown) are included for comparison. Reproduced with permission[12], Copyright 2015, Royal Society of Chemistry. (b) Proposed mechanism of photo-induced cleaning by halide redistribution. Reproduced with permission[15], Copyright 2016, Nature Publishing Group. (c) (d) Photoluminescence enhancement and quenching mechanisms. (c) Ion dynamics in MAPbI3 thin film promoting PLIE, when the probability of I0 species encounters is small and Frenkel pair annihilation is boosted by electron trapping, and PLID (d) when the probability of I0 species encounters is high, boosting I2 molecule formation. (c/d) Reproduced with permission[16], Copyright 2019, Nature Publishing Group.