Author Affiliations
1 College of Physics and Electronic Engineering, Heze University, Heze, Shandong 274015, China2 Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin City, Institute of Photo-Electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, Chinashow less
Fig. 1. Structural diagram of SHJ solar cell
Fig. 2. SEM images of pyramid profile. (a) Before isotropic etching; (b) after isotropic etching
Fig. 3. SEM images of silicon substrates textured by NaOH solution with mass fraction of 2% after different CP133 polishing time treatments. (a) 30 s; (b) 40 s; (c) 50 s; (d) 60 s; (e) 70 s
Fig. 4. Performance of solar cells as a function of chemical polishing time [w(NaOH)=2%]
Fig. 5. Effect of CP133 polishing time on external quantum efficiency (EQE) of solar cells [w(NaOH)=2%]
Fig. 6. SEM images of silicon substrates textured by NaOH solution with mass fraction of 1% after different polishing time treatments. (a) 20 s; (b) 30 s; (c) 40 s
Fig. 7. Performance of solar cells as a function of polishing time [w(NaOH)=1%]
Fig. 8. SEM images of silicon substrates textured by NaOH solutions of different concentrations after 30 s CP133 polishing treatment. (a) 2%; (b) 1%
Fig. 9. EQE curves for cells with optimal conversion efficiency
Lifetime as-deposited /μs | /V | Lifetime afterannealing /μs | /V |
---|
118 | 0.668 | 181 | 0.684 | 110 | 0.665 | 162 | 0.68 |
|
Table 1. Minority carrier lifetime and corresponding Voc-imp of texturing silicon substrates in treatment 1
Lifetime as-deposited /μs | /V | Lifetime afterannealing /μs | /V |
---|
677.8 | 0.72 | 1399.86 | 0.733 | 495.42 | 0.712 | 1137.94 | 0.731 |
|
Table 2. Minority carrier lifetime and corresponding Voc-imp of texturing silicon substrates in treatment 2
CP polishing time /s | Lifetime as-deposited /μs | /V | Lifetime after annealing /μs | /V |
---|
40 | 143.44 | 0.653 | 246.07 | 0.677 | 50 | 158.32 | 0.656 | 262.05 | 0.678 | 60 | 226.37 | 0.673 | 550.56 | 0.703 |
|
Table 3. Effect of CP133 polishing time on minority carrier lifetime and corresponding Voc-imp of texturing silicon substrates [w(NaOH)=2%]
CP polishingtime /s | Lifetime afterannealing /μs | /V |
---|
20 | 83.23 | 0.643 | 30 | 238.57 | 0.676 | 40 | 116.29 | 0.648 | 50 | 53.17 | 0.626 |
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Table 4. Minority carrier lifetime and corresponding Voc-imp of texturing silicon substrates in treatment 3 [w(NaOH)=1%]
Concentration of NaOH /% | CP polishing time /s | /V | Ff /% | η /% | Jsc-QE /(mA·cm-2) |
---|
1 | 30 | 0.656 | 68.8 | 16.5 | 36.5 | 2 | 60 | 0.678 | 65.8 | 14.9 | 33.5 |
|
Table 5. Optimal performance parameters of SHJ solar cells for textured substrates prepared at different concentrations of NaOH solutions