ing to avoid the local epitaxial growth of amorphous silicon films in the pyramidal valleys of the textured silicon wafers, a chemical polishing mixture named CP133 is used to polish the textured crystalline silicon (c-Si) surfaces. The research results show that the morphologies of the pyramidal valleys change from V shape to U shape, which clearly improves the passivation effect at the hydrogenated amorphous silicon/crystalline silicon interface. When the temperature is lower than 30 ℃, the solution is difficult to react with the crystalline silicon. However, the problem can be solved by the increase of the solution temperature up to 35 ℃. The performance of the solar cells is relatively good when the polishing time is 30 s and the NaOH texturing solution has a mass fraction of 1%.