Tian-Ying HE, Qiang QIN, Jin-Cheng KONG, Gang QIN, Chao-Wei YANG, Xiang-Qian WANG, Hong-Fu LI, Qiong-Fang WANG, Yong-Liang LI, Yi-Hu YANG, Yi-Min LI, Lin-Wei SONG, Xiu-Hua YANG, Yun LUO, Nan CHEN, Xu HU, Jun ZHAO, Peng ZHAO. High operating temperature p-on-n HgCdTe MWIR 1024×768 FPA detector[J]. Journal of Infrared and Millimeter Waves, 2023, 42(6): 711
- Journal of Infrared and Millimeter Waves
- Vol. 42, Issue 6, 711 (2023)
Fig. 1. The photograph of the MWIR HgCdTe HOT IDCA
Fig. 2. Current-voltage characteristics for the MWIR HgCdTe p-on-n photodiode，293 K black body，150 K operating temperature
Fig. 3. The relative spectral response at 150 K operating temperature，λc= 4.97 μm
Fig. 4. The dark current dependence on the reciprocal temperature of p-on-n MWIR FPAs versus the predicted values by “Rule 07” and “Law 19”
Fig. 5. The temperature dependence of the NETD for the FPAs，measured with an aperture of F/2 in front of a black body at a temperature of 20 ℃
Fig. 6. The NETD histogram of FPAs at 150 K
Fig. 7. The temperature dependence of the operability for FPAs
Fig. 8. The blind pixel distribution of 1 024×768 MWIR FPAs (above) and the central 512×384 area (below) at 150 K
Fig. 9. The IR-image at an operating temperature of 150 K from MWIR HgCdTe HOT FPAs
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Table 1. Typical performances of the HgCdTe MWIR HOT IDCA
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