• Acta Photonica Sinica
  • Vol. 49, Issue 8, 0823001 (2020)
Pei MA1, Hong-yun XIE1、*, Yin SHA1, Yang XIANG1, Liang CHEN2, Min GUO1, Xian-cheng LIU1, and Wan-rong ZHANG1
Author Affiliations
  • 1Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China
  • 2College of Physics and Electronic Engineering, Taishan University, Taian, Shandong 271000, China
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    DOI: 10.3788/gzxb20204908.0823001 Cite this Article
    Pei MA, Hong-yun XIE, Yin SHA, Yang XIANG, Liang CHEN, Min GUO, Xian-cheng LIU, Wan-rong ZHANG. Effect of Optical Window on Optical Response Characteristics of SiGe/Si Heterojunction Phototransistor[J]. Acta Photonica Sinica, 2020, 49(8): 0823001 Copy Citation Text show less
    References

    [3] C KACHRIS, K KANONAKIS, I TOMKOS. Optical interconnection networks in data centers recent trends and future challenges. IEEE Communication Magazine, 51, 39-45(2013).

    [4] T YIN, A M PAPPU, A B APSEL. Low-cost, high-efficiency, and high-speed SiGe phototransistors in commercial BiCMOS. IEEE Photonics Technology Letters, 18, 55-57(2005).

    [6] K S LAI, J C HUANG, Y J HSU. Design and properties of phototransistor photodetector in standard 0.35μm SiGe BiCMOS technology. IEEE Transactions on Electron Devices, 55, 774-781(2008).

    [7] M D ROSALES, F DUPORT, J SCHIELLEIN. Opto-microwave experimental mapping of SiGe/Si phototransistors at 850nm. International Journal of Microwave and Wireless Technologies, 1, 469-473(2009).

    [8] Z G TEGEGNE, C VIANA, J L POLLEUX. Study of lateral scaling impact on the frequency performance of SiGe heterojunction bipolar phototransistor. IEEE Journal of Quantum Electronics, 54, 1-8(2018).

    [9] TEGEGNE Z G, VIANA C, POLLEUX J L, et al. Improving the optomicrowave perfmance of SiGeSi phototransist through edgeilluminated structure [C]. Silicon Photonics XI. Silicon Photonics XI, 2016.https:spie.gPublicationsProceedingsPaper10.111712.2208676igin_id=x4318&SSO=1

    [10] A BENNOUR, Z G TEGEGNE, S MAZER. Large-signal static compact circuit model of SiGe heterojunction bipolar phototransistors: effect of the distributed nature of currents. IEEE Transactions on Electron Devices, 65, 1-7(2018).

    [12] N CHAND, P A HOUSTON, P N ROBSON. Gain of a heterojunction bipolar phototransistor. IEEE Transactions on Electron Devices, 32, 622-627(1985).

    [15] ISHIBASHI T, SHIMIZU N, KODAMA S, et al. Unitravelingcarrier photodiodes[C]. Tech. Dig. Ultrafast Electronics Optoelectronics, Incline Village, Nevada, 1997: 166168.10.1364UEO.1997.UC3

    [16] M K DAS, N R DAS, P K BASU. Effect of Ge content and profile in the SiGe base on the performance of a SiGe/Si heterojunction bipolar transistor. Microwave and Optical Technology Letters, 47, 247-254(2005).

    [19] V D T RAMSES. Threshold current for the onset of kirk effect in bipolar transistors with a fully depleted nonuniformly doped collector. IEEE Electron Device Letters, 28, 54-57(2006).

    Pei MA, Hong-yun XIE, Yin SHA, Yang XIANG, Liang CHEN, Min GUO, Xian-cheng LIU, Wan-rong ZHANG. Effect of Optical Window on Optical Response Characteristics of SiGe/Si Heterojunction Phototransistor[J]. Acta Photonica Sinica, 2020, 49(8): 0823001
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