Author Affiliations
1Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China2College of Physics and Electronic Engineering, Taishan University, Taian, Shandong 271000, Chinashow less
Fig. 1. Schematic of the SiGe/Si HPT
Fig. 2. Current gain and characteristic frequency of corresponding SiGe/Si HBT
Fig. 3. Initial photogenerated current of SiGe/Si HPT with different optical window position
Fig. 4. Current gain of SiGe/Si HPT with different optical window position
Fig. 5. Collector current of SiGe/Si HPT with different optical window position
Fig. 6. Optical gain of SiGe/Si HPT with different optical window position
Fig. 7. Movement of photo-generated carriers with different optical window on base
Fig. 8. Optical characteristic frequency of SiGe/Si HPT with different optical window positions
Fig. 9. Collector current of SiGe/Si HPT with different optical window areas
Fig. 10. Optical gain of SiGe/Si HPT with different optical window areas
Fig. 11. Emitter junction capacitor and collector junction capacitor of SiGe/Si HPTs with different optical window areas
Fig. 12. Optical characteristic frequency of SiGe/Si HPT with different optical window areas
Parameter | Polysiliconemitter | Si base | Si1-xGexbase | Intrinsic Sibase | Si collector | Sisub-collector | Eg/eV | 1.12 | 1.12 | 0.94 | 1.12 | 1.12 | 1.12 | Affinity/eV | 4.05 | 4.05 | 4.17 | 4.05 | 4.05 | 4.05 | Permittivity | 11.70 | 11.70 | 12.72 | 11.70 | 11.70 | 11.70 | Mun0/(cm2·V-1·s-1) | 1 400 | 1 400 | 1 430 | 1 400 | 1 400 | 1 400 | Mup0/(cm2·V-1·s-1) | 500 | 500 | 480 | 500 | 500 | 500 | Vsatn/(cm·s-1) | 1×107 | 1×107 | 1×107 | 1×107 | 1×107 | 1×107 | Vsatp/(cm·s-1) | 1×107 | 1×107 | 1×107 | 1×107 | 1×107 | 1×107 | Taun0/s | 1×107 | 1×107 | 3×105 | 1×107 | 1×107 | 1×107 | Taup0/s | 1×107 | 1×107 | 1×105 | 1×107 | 1×107 | 1×107 | Real.index | 3.63 | 3.63 | 3.74 | 3.63 | 3.63 | 3.63 | Imag.index | 0.002 | 0.002 | 0.010 | 0.002 | 0.002 | 0.002 |
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Table 1. Material parameters used in the simulation model of SiGe/Si HPT
Optical window positions | Optical window areas | Goptmax | fToptmax | Gopt·fTopt | Emitter | 10 μm×10 μm | 9.24 | 12.96 | 119.75 | Base | 10 μm×10 μm | 1.52 | 16.75 | 25.460 | Emitter | 50 μm×10 μm | 26.6 | 7.53 | 200.298 | Base | 50 μm×10 μm | 2.54 | 13.08 | 33.223 |
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Table 2. Optical gain, optical characteristic frequency, and Gopt·fTopt of HPT with different optical window positions
Optical windowareas | ICsat(1.5 mW) | Growth rate of saturatedcurrent per unit area | Gopt | Growth rate of opticalgain per unit area | 3 μm×10 μm | 2.92 | | 4.81 | | 5 μm×10 μm | 3.62 | 0.35 | 6.06 | 0.625 | 10 μm×10 μm | 5.54 | 0.384 | 9.24 | 0.636 | 30 μm×10 μm | 10.52 | 0.249 | 20.78 | 0.577 | 50 μm×10 μm | 12.86 | 0.117 | 26.60 | 0.291 |
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Table 3. Saturation current, growth rate of saturated current per unit area, optical gain and growth rate of optical gain per unit area of SiGe/Si HPT with different optical window areas
Optical windowareas | Goptmax | Growth rate ofoptical gain perunit area | fToptmax/GHz | Decline rate offToptmax/(per unit area) | Gopt·fTopt | Growth rate ofGopt·fTopt per unitarea | 3 μm×10 μm | 4.81 | | 14.79 | | 71.13 | | 5 μm×10 μm | 6.06 | 0.625 | 14.33 | 0.23 | 86.84 | 7.855 | 10 μm×10 μm | 9.24 | 0.636 | 12.96 | 0.274 | 119.75 | 6.582 | 30 μm×10 μm | 20.78 | 0.577 | 8.70 | 0.213 | 180.79 | 3.052 | 50 μm×10 μm | 26.60 | 0.291 | 7.53 | 0.058 5 | 200.298 | 0.975 4 |
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Table 4. Optical gain, optical characteristic frequency, and Gopt·fTopt of SiGe/Si HPT with different optical window areas