• Chinese Optics Letters
  • Vol. 13, Issue 12, 123101 (2015)
Ping Xie1, Bin Li1、*, Suying Zhang1, and Dingquan Liu1、2
Author Affiliations
  • 1Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 2School of Physical Science and Technology, Shanghai Tech University, Shanghai 200031, China
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    DOI: 10.3788/COL201513.123101 Cite this Article Set citation alerts
    Ping Xie, Bin Li, Suying Zhang, Dingquan Liu. Using lead germanium telluride as a high-index coating material in the mid-wavelength infrared narrow bandpass filters[J]. Chinese Optics Letters, 2015, 13(12): 123101 Copy Citation Text show less
    Measured spectral transmittance curves of thin films; a spectrum of the silicon substrate is also presented in order to make a comparison.
    Fig. 1. Measured spectral transmittance curves of thin films; a spectrum of the silicon substrate is also presented in order to make a comparison.
    Optical constants of thin films evaporated from the starting materials with a Ge concentration x of 0.18.
    Fig. 2. Optical constants of thin films evaporated from the starting materials with a Ge concentration x of 0.18.
    Summary of measured spectral transmittance curves for the sapphire wafer, silicon wafer, Ge wafer, Pb1−xGexTe thin films, and PbTe thin films, respectively.
    Fig. 3. Summary of measured spectral transmittance curves for the sapphire wafer, silicon wafer, Ge wafer, Pb1xGexTe thin films, and PbTe thin films, respectively.
    Transmission spectrum of the narrowband filter fabricated using Pb1−xGexTe as a high-index material (black), compared with that using Ge as a high-index material (red).
    Fig. 4. Transmission spectrum of the narrowband filter fabricated using Pb1xGexTe as a high-index material (black), compared with that using Ge as a high-index material (red).
    Standard adhesion tests are performed on the filters using Pb1−xGexTe as a high-index layer material.
    Fig. 5. Standard adhesion tests are performed on the filters using Pb1xGexTe as a high-index layer material.
     Elements Concentration (%)Ge Concentration in Films (y)Te concentration in films (z)
    Ge Concentration in Evaporants (x)GePbTe
    0.081.0048.2450.770.020.52
    0.101.9246.8851.200.040.51
    0.122.4547.1150.440.050.50
    0.143.0246.9350.050.060.50
    0.164.0746.6049.330.080.49
    0.185.1146.9347.950.100.48
    0.256.9846.5846.430.130.46
    Table 1. Summary for Element Concentrations in Thin Films
    Ping Xie, Bin Li, Suying Zhang, Dingquan Liu. Using lead germanium telluride as a high-index coating material in the mid-wavelength infrared narrow bandpass filters[J]. Chinese Optics Letters, 2015, 13(12): 123101
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