Ping Xie, Bin Li, Suying Zhang, Dingquan Liu, "Using lead germanium telluride as a high-index coating material in the mid-wavelength infrared narrow bandpass filters," Chin. Opt. Lett. 13, 123101 (2015)

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- Chinese Optics Letters
- Vol. 13, Issue 12, 123101 (2015)

Fig. 1. Measured spectral transmittance curves of thin films; a spectrum of the silicon substrate is also presented in order to make a comparison.

Fig. 2. Optical constants of thin films evaporated from the starting materials with a Ge concentration x of 0.18.

Fig. 3. Summary of measured spectral transmittance curves for the sapphire wafer, silicon wafer, Ge wafer, Pb 1 − x Ge x Te thin films, and PbTe thin films, respectively.

Fig. 4. Transmission spectrum of the narrowband filter fabricated using Pb 1 − x Ge x Te as a high-index material (black), compared with that using Ge as a high-index material (red).

Fig. 5. Standard adhesion tests are performed on the filters using Pb 1 − x Ge x Te as a high-index layer material.
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Table 1. Summary for Element Concentrations in Thin Films

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