In our investigation, lead germanium telluride, which is a pseudo-binary alloy of IV-VI narrow-gap semiconductor compounds of PbTe and GeTe, can be used in the fabrication of mid-wavelength infrared narrow bandpass filters as a high-index coating material, due to its high refractive index, lower absorption, and tunability of fundamental absorption edges. It is demonstrated that a half-width of 160 nm and a better rejection ratio can be obtained for a simple 8-layer double cavity filter with a central wavelength at 4 μm, compared with a half-width of 390 nm for those conveniently fabricated using Ge as high-index material.