915 nm semiconductor laser new type facet passivation technology

Wang Xin; Zhu Lingni; Zhao Yihao; Kong Jinxia; Wang Cuiluan; Xiong Cong; Ma Xiaoyu; Liu Suping

doi:10.3788/irla201948.0105002

[1] Wang Lijun, Peng Hangyu, Zhang Jun, et al. Development of beam combining of high power high brightness diode lasers[J]. Infrared and Laser Engineering, 2017, 46(4): 0401001. (in Chinese)

[2] Xu Zhengwen, Qu Yi, Wang Yuzhi, et al. Simulation analysis of high power asymmetric 980 nm broad-waveguide diode lasers[J]. Infrared and Laser Engineering, 2014, 43(4): 1094-1098. (in Chinese)

[3] Li Zhi, Yao Shun, Gao Xiangyu, et al. Calculation for the fast axis beam quality of the laser diode stack[J]. Infrared and Laser Engineering, 2015, 44(1): 85-90. (in Chinese)

[4] Li Zaijin, Hu Liming, Wang Ye, et al. Fabrication of 808 nm Al-containing semiconductor laser diode high damage threshold facet coating[J]. Infrared and Laser Engineering, 2010, 39(6): 1034-1037. (in Chinese)

[5] Hai Yina, Zou Yonggang, Tian Kun, et al. Research progress of horizontal cavity surface emitting semiconductor lasers[J].Chinese Optics, 2017, 10(2): 195-206. (in Chinese)

[6] Liu Youqiang, Cao Yinhua, Li Jing, et al. 5 kW fiber coupling diode laser for laser processing [J]. Optics and Precision Engineering, 2015, 23(5): 1279-1287. (in Chinese)

[7] Zhu Hongbo, Hao Mingming, Liu Yun, et al. 808 nm high brightness module of fiber coupled diode laser[J]. Optics and Precision Engineering, 2012, 20(8): 1684-1689. (in Chinese)

[8] Wu Hualing, Guo Linhui, Yu Junhong, et al. Design of 500 W-output fiber-coupled diode laser module[J]. Infrared and Laser Engineering, 2017, 46(10): 1005005. (in Chinese)

[9] Kong Zhenzhen, Cui Bifeng, Huang Xinzhu, et al. Study on performance improvement of high power semiconductor lasers[J]. Laser & Optoelectronics Progress, 2017, 54: 071403. (in Chinese)

[10] He Xin, Cui Bifeng, Liu Menghan. Research on nitrogen passivation for high power semiconductor lasers [J]. Laser & Infrared, 2016, 46(7): 805-808. (in Chinese)

[11] Liu Bin, Liu Yuanyuan, Cui Bifeng. Long-term aging and failure analysis for 980 nm laser diodes[J]. Laser & Optoelectronics Progress, 2012, 49: 091404. (in Chinese)

[12] Christofer S, Yangting S, Peter B, et al. Nitride facet passivation raises reliability, COMD and enables high temperature operation of InGaAsP, InGaAs and InAlGaAs lasers[C]//SPIE, 2005, 5711: 189-200.

[13] Brennan B, Milojevic M, Hinkle C L, et al. Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As[J]. Applied Surface Science, 2011, 257: 4082-4090.

[14] Chand N, Hobson W S, De Jong J F. ZnSe for mirror passiwation of high power GaAs based lasers[J]. Electronics Letter, 1996, 32(17): 1595-1596.

[15] Ziegler M, Tomm W, Elsaesser T. Imaging catastrophic optical mirror damage in high-power diode lasers[J]. Journal of Electronic Materials, 2010, 39(6): 709-714.

[16] Souto J, Pura J L, Torres A. Catastrophic optical damage of high power InGaAs/AlGaAs laser diodes[J]. Microelectronics Reliability, 2016, 64: 627-630.

[17] Gong Xueqin, Feng Shiwei, Yang Hongwei. Degradation analysis of facet coating in GaAs-based high-power laser diodes[J]. IEEE Transactions on Device and Materials Reliability, 2015, 15(3): 359-362.