Aiming at the mechanism of catastrophic optical damage of semiconductor laser cavity surface, a single-chip semiconductor laser cavity surface vacuum cleavage passivation process was designed. The cleavage process in vacuum and direct evaporation of passivation film on the surface of semiconductor laser cavity was proposed. Using ZnSe material as the passivation film material for the vacuum cleavage process of single-die semiconductor laser, it was found that the vacuum cleavage passivation process and ZnSe material could be used as the passivation film to increase the output power of the device by 23%. The mechanism of semiconductor laser cavity surface damage was analyzed by electroluminescence (EL). It is further explained that the introduction of vacuum cleavage passivation technology in the preparation process of 915 nm semiconductor laser and the selection of ZnSe as the passivation film can effectively protect the cavity surface of the semiconductor laser and improve device reliability.