• Laser & Optoelectronics Progress
  • Vol. 58, Issue 7, 0700008 (2021)
Xiangyuan Wang, Bifeng Cui*, Caifang Li, Jianrong Xu, and Haojie Wang
Author Affiliations
  • Key Laboratory of Opto-Electronics Technology of Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing 100124,China
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    DOI: 10.3788/LOP202158.0700008 Cite this Article Set citation alerts
    Xiangyuan Wang, Bifeng Cui, Caifang Li, Jianrong Xu, Haojie Wang. Research Progress of Transverse Mode Control for Vertical Cavity Surface Emitting Lasers[J]. Laser & Optoelectronics Progress, 2021, 58(7): 0700008 Copy Citation Text show less
    SEM image of a photonic crystal VCSEL[11]
    Fig. 1. SEM image of a photonic crystal VCSEL[11]
    Near-field pattern and spectra of photonic crystal defect fundamental lasing mode[12]. (a) Single defect; (b) 7-point defect
    Fig. 2. Near-field pattern and spectra of photonic crystal defect fundamental lasing mode[12]. (a) Single defect; (b) 7-point defect
    Near-field image of photonic crystal VCSEL with two defects[13]
    Fig. 3. Near-field image of photonic crystal VCSEL with two defects[13]
    Far-field intensity profiles for uncoupled and coupled defects[13]
    Fig. 4. Far-field intensity profiles for uncoupled and coupled defects[13]
    Structure of PC VCSEL[14]. (a) SEM image of square-lattice PC VCSEL; (b) modified PC VCSEL
    Fig. 5. Structure of PC VCSEL[14]. (a) SEM image of square-lattice PC VCSEL; (b) modified PC VCSEL
    Schematic of QD PC VCSEL[16]. (a) PC structure; (b) cross-sectional view
    Fig. 6. Schematic of QD PC VCSEL[16]. (a) PC structure; (b) cross-sectional view
    Schematic of VCSEL with etched surface-relief[19]
    Fig. 7. Schematic of VCSEL with etched surface-relief[19]
    VCSEL with triangular holey structure [20]
    Fig. 8. VCSEL with triangular holey structure [20]
    Light-current characteristics near-field patterns and spectra[20]
    Fig. 9. Light-current characteristics near-field patterns and spectra[20]
    Schematic of 1.3 μm QD VCSEL with surface-relief technique[21]
    Fig. 10. Schematic of 1.3 μm QD VCSEL with surface-relief technique[21]
    Structure of fabricated VCSEL[22]
    Fig. 11. Structure of fabricated VCSEL[22]
    Schematic of ellipse surface relief VCSEL[25]
    Fig. 12. Schematic of ellipse surface relief VCSEL[25]
    Cross-section schematic of 10 μm long monolithic VCSEL[26]
    Fig. 13. Cross-section schematic of 10 μm long monolithic VCSEL[26]
    Structure of coupled-resonator VCSEL[29]
    Fig. 14. Structure of coupled-resonator VCSEL[29]
    Cross-section schematic of monolithic integrated VCSEL[30]
    Fig. 15. Cross-section schematic of monolithic integrated VCSEL[30]
    Schematic of anti-waveguide VCSEL [31]
    Fig. 16. Schematic of anti-waveguide VCSEL [31]
    Cross-sectional view of ARROW VCSEL[33]
    Fig. 17. Cross-sectional view of ARROW VCSEL[33]
    ARROW VCSEL structure with oxide island[35]
    Fig. 18. ARROW VCSEL structure with oxide island[35]
    Cross-section schematic of HCG integrated VCSEL[37]
    Fig. 19. Cross-section schematic of HCG integrated VCSEL[37]
    HCG VCSEL transverse mode control[38]. (a) Schematic; (b) calculated angular dependence of HCG for transverse-mode control of VCSEL
    Fig. 20. HCG VCSEL transverse mode control[38]. (a) Schematic; (b) calculated angular dependence of HCG for transverse-mode control of VCSEL
    Structure diagram of Si-SiO2 HCG[39]. (a) Three-dimensional structure diagram; (b) cross-sectional view of grating after filling liquid crystal
    Fig. 21. Structure diagram of Si-SiO2 HCG[39]. (a) Three-dimensional structure diagram; (b) cross-sectional view of grating after filling liquid crystal
    TimeWavelength /nmMethodThreshold current /mAPower /mWOperating current /mAOxide aperture /μm

    1999

    2000

    2000

    2004

    2007

    2012

    2000

    2001

    2001

    2002

    2005

    2008

    2013

    1996

    850

    850

    850

    850

    850

    850

    980

    980

    980

    980

    980

    980

    980

    990

    Surface relief[23]

    Surface relief[19]

    Extended resonator[29]

    Surface relief[20]

    HCG[37]

    PC[18]

    Extended resonator[27]

    PC[9]

    Surface relief[21]

    ARROW[30]

    Extended resonator[25]

    Extended resonator [27]

    HCG[38]

    ARROW[32]

    1.5

    2.2

    1.5

    5

    4

    0.9

    1.5

    10

    3

    16

    9.1

    7.5

    1

    0.5

    2

    2.2

    5.2

    7

    2

    3.1

    5

    0.45

    5.7

    7.1

    7.8

    15

    0.5

    1.5

    4

    6

    13.7

    10

    10

    9

    48

    7

    22

    35

    38

    3

    7.5

    7

    9

    10

    15

    10

    8

    7

    12

    7

    8

    6

    9

    6

    10

    2008990(QD)PC[16]4.25.73518
    20081300(QD)PC[16]4.750.25626
    20111300(QD)Surface relief[21]2.153.4215
    Table 1. Fundamental transverse mode power comparison of 850 nm—1.3 μm band VCSEL under different transverse mode control methods
    Xiangyuan Wang, Bifeng Cui, Caifang Li, Jianrong Xu, Haojie Wang. Research Progress of Transverse Mode Control for Vertical Cavity Surface Emitting Lasers[J]. Laser & Optoelectronics Progress, 2021, 58(7): 0700008
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