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    Journals >Journal of Terahertz Science and Electronic Information Technology >Volume 20 >Issue 4 >Page 402 > Article
    • Journal of Terahertz Science and Electronic Information Technology
    • Vol. 20, Issue 4, 402 (2022)
    Design and realization of a new VDMOS device structure
    DONG Zixu1、2、*, WANG Wanli2, ZHAO Xiaoli2, ZHANG Xinyu2, and LIU Xiaofang2
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  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.11805/tkyda2020200 Cite this Article
    DONG Zixu, WANG Wanli, ZHAO Xiaoli, ZHANG Xinyu, LIU Xiaofang. Design and realization of a new VDMOS device structure[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(4): 402 Copy Citation Text show less
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    DONG Zixu, WANG Wanli, ZHAO Xiaoli, ZHANG Xinyu, LIU Xiaofang. Design and realization of a new VDMOS device structure[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(4): 402
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