Ke-Xiu Dong, Dun-Jun Chen, Qing Cai, Yan-Li liu, Yu-Jie Wang. Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure[J]. Chinese Physics B, 2020, 29(8):
- Chinese Physics B
- Vol. 29, Issue 8, (2020)
Fig. 1. Schematic structure of (a) standard AlGaN SAM APD with bevel angle and FP termination, and (b) standard AlGaN SAM APD with triple-mesa and FP termination.
Fig. 2. (a) I –V characteristics in dark and under illumination and gain for AlGaN SAM APD with different bevel angles and FP structure, (b) schematic structure of AlGaN SAM APD without FP, and (c) I –V characteristics in dark and under illumination as well as gain for AlGaN SAM APD without FP.
Fig. 3. Simulated two-dimensional electric field distribution for APD with bevel angle of (a) 10°, (b) 20°, (c) 40°, and (d) 60°, and electric field distribution along x direction in multiplication layer at (e) y = 190 nm, (f) y = 280 nm, (g) y = 350 nm with reverse bias 30 V.
Fig. 4. (a) Two-dimensional electric field for AlGaN APD with 60° bevel angle and FP structure at reverse bias of 30 V, (b) electric field distribution along x direction in multiplication layer for 60° bevelled AlGaN APD with and without FP structure.
Fig. 5. I –V characteristic curves in dark and under illunination and gain for AlGaN APDs with different mesa sizes (a) with and (b) without FP. (c) Schematic structure of AlGaN APD with triple-mesa structure.
Fig. 6. Two-dimensional electric field distribution at reverse bias of 30 V for APD with first-mesa size (a) 5.2 μm, (b) 4 μm, and (c) 1.6 μm.
Fig. 7. Two-dimensional electric field distribution at reverse bias of 30 V for the APD with FP and first-mesa size (a) 5.2 μm, (b) 4 μm, (c) 1.6 μm, and (d) ideal structure.
Set citation alerts for the article
Please enter your email address
© Copyright 2018-2021 | Chinese Laser Press. All Rights Reserved 沪ICP备15018463号-20