• Chinese Physics B
  • Vol. 29, Issue 8, (2020)
Ke-Xiu Dong1, Dun-Jun Chen2、†, Qing Cai2, Yan-Li liu3, and Yu-Jie Wang1
Author Affiliations
  • 1School of Mechanical and Electrical Engineering, Chuzhou University, Chuzhou 239000, China
  • 2Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 10093, China
  • 3School of Information and Electronic Engineering, Shandong Technology and Business University, Yantai 264005, China
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    DOI: 10.1088/1674-1056/ab90f1 Cite this Article
    Ke-Xiu Dong, Dun-Jun Chen, Qing Cai, Yan-Li liu, Yu-Jie Wang. Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure[J]. Chinese Physics B, 2020, 29(8): Copy Citation Text show less

    Abstract

    To suppress the electric field crowding at sidewall and improve the detection sensitivity of the AlGaN separate absorption and multiplication (SAM) avalanche photodiodes (APDs), we propose the new AlGaN APDs structure combining a large-area mesa with a field plate (FP). The simulated results show that the proposed AlGaN APDs exhibit a significant increase in avalanche gain, about two orders of magnitude, compared to their counterparts without FP structure, which is attributed to the suppression of electric field crowding at sidewall of multiplication layer and the reduction of the maximum electric field at the p-type GaN sidewall in p–n depletion region. Meanwhile, the APDs can produce an obviously enhanced photocurrent due to the increase in cross sectional area of multiplication region.
    Ke-Xiu Dong, Dun-Jun Chen, Qing Cai, Yan-Li liu, Yu-Jie Wang. Theoretical analysis for AlGaN avalanche photodiodes with mesa and field plate structure[J]. Chinese Physics B, 2020, 29(8):
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