STUDY OF ULTRAFAST PROCESS IN SEMICONDUCTOR

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 24 >Issue 3 >Page 179 > Article

Journal of Infrared and Millimeter Waves
Vol. 24, Issue 3, 179 (2005)

STUDY OF ULTRAFAST PROCESS IN SEMICONDUCTOR

[in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. STUDY OF ULTRAFAST PROCESS IN SEMICONDUCTOR[J]. Journal of Infrared and Millimeter Waves, 2005, 24(3): 179 Copy Citation Text

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References

[1] Yang Z C, Ho W. Alkali promotion of photodissociation of adsorbed Mo(CO) [J] ,Phys. Rev. Lett., 1990, 65:741.

[2] Shah J. Hot electrons and phonons under high intensity photoexcitation of semiconductors [J], Solid-State Electron. ,1978, 21: 43.

[3] Bigot J Y, Portella M T, Schoenlein R W, et al. Two-dimensional carrier-carrier screening in a quantum well [J],Phys. Rev. Lett., 1991,67:636.

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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. STUDY OF ULTRAFAST PROCESS IN SEMICONDUCTOR[J]. Journal of Infrared and Millimeter Waves, 2005, 24(3): 179

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