Research progress of tunable terahertz metamaterial absorbers

ZHANG Ruoya; ZHU Qiaofen; ZHANG Yan

doi:10.3969/j.issn.1007-5461.2023.03.002

Journals >Chinese Journal of Quantum Electronics >Volume 40 >Issue 3 >Page 301 > Article

Chinese Journal of Quantum Electronics
Vol. 40, Issue 3, 301 (2023)

Research progress of tunable terahertz metamaterial absorbers

ZHANG Ruoya¹, ZHU Qiaofen^1,*, and ZHANG Yan^2,**

Author Affiliations

¹Hebei International Joint Research Center for Computational Optical Imaging and Intelligent Sensing, Hebei Computational Optical Imaging and Photoelectric Detection Technology Innovation Center, School of Mathematics and Physics Science and Engineering, Hebei University of Engineering, Handan 056038, China

²Beijing Advanced Innovation Center for Imaging Theory and Technology, Key Laboratory of Terahertz Optoelectronics,Ministry of Education, Beijing Key Laboratory of Metamaterials and Devices, Department of Physics,Capital Normal University, Beijing 100048, China

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DOI: 10.3969/j.issn.1007-5461.2023.03.002 Cite this Article

Ruoya ZHANG, Qiaofen ZHU, Yan ZHANG. Research progress of tunable terahertz metamaterial absorbers[J]. Chinese Journal of Quantum Electronics, 2023, 40(3): 301 Copy Citation Text

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Terahertz absorber based on metal-patch. (a) Schematic diagram of structure and (b) the absorption curve at different incident angles under TE and TM polarization of the terahertz metamaterial absorber based on three-layer structure proposed by Tao et al [27];(c) Schematic diagram of structure and (d) the tunable changes of absorption curves depend on length l1 and l4 of the terahertz metamaterial absorber with multiband absorption proposed by Wang et al [28]

Fig. 1. Terahertz absorber based on metal-patch. (a) Schematic diagram of structure and (b) the absorption curve at different incident angles under TE and TM polarization of the terahertz metamaterial absorber based on three-layer structure proposed by Tao et al ^[27];(c) Schematic diagram of structure and (d) the tunable changes of absorption curves depend on length l₁and l₄of the terahertz metamaterial absorber with multiband absorption proposed by Wang et al ^[28]

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Fig. 2. Research history of tunable terahertz metamaterial absorber^{[27, 29-33]}

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Fig. 3. Single-band tunable terahertz metamaterial absorber. (a) Schematic diagram of structure and (b) the tunable changes of absorption curves depend on different Fermi energy level of the narrow band tunable terahertz absorber based on Dirac semi-metal proposed by Liu et al ^[34]; (c) Schematic diagram of structure and (d) the tunable changes of absorption curves depend on different temperature and Fermi energy level of the tunable terahertz metamaterial absorber based on hybrid materials proposed by Huang et al ^[35]

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Fig. 4. Multi-band tunable terahertz metamaterial absorber. (a) Schematic diagram of structure and (b) the tunable changes of absorption curves depend on different Fermi energy level of the double band tunable terahertz metamaterial absorber with five layers proposed by Chen et al ^[50]; (c) Schematic diagram of structure and (d) the tunable changes of absorption curves depend on different Fermi energy level of the double band tunable terahertz absorber based on Dirac semi-metal proposed by Zhang et al ^[51]

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Fig. 5. Broadband tunable terahertz metamaterial absorber. (a) Schematic diagram of structure and (b) the tunable changes of absorption curves depend on different conductivity of the narrow band tunable terahertz absorber based on vanadium oxide proposed by Song et al ^[65]; (c) Schematic diagram of structure and (d) the tunable changes of absorption curves depend on different Fermi energy level of the wide band tunable terahertz absorber based on graphene proposed by Mou et al ^[66]

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Fig. 6. Switchable bifunctional terahertz metamaterial absorber. (a) Schematic diagram of structure and (b) the tunable changes of absorption curves depend on different temperature of the double broadband switchable terahertz absorber proposed by Zhao et al ^[32];(c) Schematic diagram of structure and (d) the tunable changes of absorption curves depend on different Fermi energy level of the wide band and narrow band switchable dual function terahertz absorber based on graphene and vanadium dioxide composite proposed by Zhang et al ^[33]; (e) Schematic diagram of structure and (f) the tunable changes of absorption curves depend on different Fermi energy level of the switchable bifunctional terahertz absorber based on Dirac semi metal and vanadium dioxide proposed by Li et al ^[85]

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Layer	Material	Parameter	Fequency	Absorptance	Function	Reference
3	Graphene	E_f: 0～0.6 eV	0.48~1.579 THz	>99%	Single-band tunable terahertz metamaterial absorber	[36]
3	Dirac semimetal	E_f : 65~85 meV	2.46~3.16 THz	>95%		[37]
4	Dirac semimetal Strontium titanate	E_f : 10~80 meV T: 300 K	3.265~4.82 THz	70%～99.9%		[38]
4	Dirac semimetal Strontium titanate	T: 200~300 K E_f =40 meV	2.665~3.69 THz	>99%		[38]
3	Strontium titanate	T: 200~400 K	1.71～2.48 THz	>99%		[39]
7	Liquid crystal	V: 0～saturation	red shift	>90%		[40]
4	InSb	T: 160~350 K	0.82~1.02 THz	>88.7%		[41]
3	Photoconductive silicon	σ: 1~1×10⁵ S/m		0%～100%		[42]

Table 1. Summary of single-band tunable terahertz metamaterial absorber

Layer	Material	Parameter	Frequency	Absorptance	Function	Reference
3	Graphene	E_f : 0.6~0.9 eV	7.1~8.7 THz 10.4~12.7 THz	>85%	Dual-band absorption	[52]
3	Dirac semimetal VO₂	σ: 10~10⁵ S/m E_f =0.13 eV		6.5%～97.8% 10%～99.27% 9%～99.54%	Triple-band absorption	[53]
3	Dirac semimetal VO₂	E_f : 0.11~0.15 eV σ=10⁵ S/m	blue shift	>90%	Triple-band absorption	[53]
3	Strontium titanate	T: 200~500 K	blue shift	>95%	Dual-band absorption	[54]
7	Liquid crystal	V: 0～12 V	red shift	>80.1%	Dual-band absorption	[55]

Table 2. Summary of multi-band tunable terahertz metamaterial absorber

Layer	Material	Parameter	Frequency	Absorptance	Function	Reference
4	Dirac semimetal Strontium titanate	E_f : 40～0 meV T=300 K	unchanged 1.43～1.58 THz	>80%	BW=0.65 THz (absorptance>80%)	[67]
4	Dirac semimetal Strontium titanate	T: 250～400 K E_f =45 meV	1.14～1.35 THz 1.51～1.76 THz	>80%	BW=0.65 THz (absorptance>80%)	[67]
3	Graphene	E_f : 0～0.7 eV		1%～99%	BW=0.76 THz (absorptance>90%)	[68]
3	Graphene Graphene	E_f : 0.6～1.0 eV	3.35～4.15 THz	>70%	BW=1.13 THz (absorptance>90%)	[69]
5	Graphene Graphene	E_f : 0.7～1.1 eV	2.86～5.08 THz ～ 3.16～6.01 THz	>85%	BW=2.85 THz (absorptance>90%)	[69]
4	Graphene VO₂	σ: 10～2×10⁵ S/m E_f=0.1 eV		28%～99%	BW=1.70 THz (absorptance>90%)	[70]
4	Graphene VO₂	E_f : 0.1～0.6 eV σ=2×10⁵ S/m	Blue shift	>90%	BW=1.70 THz (absorptance>90%)	[70]
3	Dirac semimetal	E_f : 40～80 meV	Blue shift		BW=2.70 THz (absorptance>90%)	[71]
3	VO₂	σ: 200～2×10⁵ S/m		4%～100%	BW=4.10 THz (absorptance>90%)	[64]
5	Graphene Dirac semimetal	E_f : 0 ~1.7 eV E_f = 60 meV	5～7.44 THz ～ 4.79～8.99 THz	>80%	BW=4.20 THz (absorptance>90%)	[72]
5	Graphene Dirac semimetal	E_f : 10~100 meV E_f =1.7 eV	Blue shift		BW=4.20 THz (absorptance>90%)	[72]

Table 3. Summary of broadband tunable terahertz metamaterial absorber

Layer	Material	Parameter	Frequency	Absorptance	Function	Reference
6	VO₂	σ: 0～10⁵ S/m			Narrowband absorption switch to broadband absorption	[86]
5	Graphene VO₂	σ: 40～2×10⁵ S/m E_f= 0.7 eV			broadband absorption switch to triple-band absorption	[87]
		E_f : 0～0.7 eV σ= 40 S/m		20%～100%	BW=1.52 THz(absorptance>90%)
		E_f : 0.5～1.0 eV σ=2×10⁵ S/m	1～1.1 THz 2.2～2.65 THz 2.55～3.16 THz	>90%	triple-band absorption
6	Graphene VO₂	σ: 200～2×10⁵ S/m E_f= 0.9 eV			six-band absorption switch to broadband absorption	[88]
		σ=2×10⁵ S/m		>90%	BW=3.83 THz(absorptance>90%)
		E_f: 0 eV～1.0 eV σ= 200 S/m	blue shift	>85.1%	six-band absorption
6	Graphene VO₂	σ: 0 S/m～2×10⁵ S/m E_f= 0.7 eV			broadband absorption switch to broadband absorption	[89]
		σ=2×10⁵ S/m		>90%	BW=2.25 THz(absorptance>90%)
		E_f : 0.01 eV～0.7 eV σ= 200 S/m		5.2%～99.8%	bandwidth=1.20 THz(absorptance>90%)
4	Graphene	E_f: 150 meV～550 meV			broadband absorption switch to triple-band absorption	[90]
3	Photoconductive silicon	σ: 1 S/m～5×10⁵ S/m	red shift		dual-band absorption switch to single-band absorption	[91]
5	Photoconductive silicon VO₂	σ(Si): 2.5×10^-4 S/m σ(VO₂): 2×10⁵ S/m		>90%	BW=4.66 THz(absorptance>90%)	[92]
		σ(Si): 8×10⁴ S/m σ(VO₂): 20 S/m		>90%	dual-band absorption
		σ(Si): 2.5×10^-4～3×10⁵ S/m σ(VO₂) =20 S/m		4%～99%
		σ(Si): 2.5×10^-4～3×10⁵ S/m σ(VO₂) =2×10⁵ S/m		60%～99%
		σ(VO₂): 20～2×10⁵ S/m σ(Si) =2.5×10^-4 S/m		2%～99%
		σ(VO₂): 20～2×10⁵ S/m σ(Si) =8×10⁴ S/m		69%～99%

Table 4. Summary of switchable bifunctional terahertz metamaterial absorber

Ruoya ZHANG, Qiaofen ZHU, Yan ZHANG. Research progress of tunable terahertz metamaterial absorbers[J]. Chinese Journal of Quantum Electronics, 2023, 40(3): 301

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