Fig. 1. (a) Schematic of the 940-nm detector-integrated VCSEL with a movable HCG. (b) Doping profile of the device. (c) SEM image of the fabricated device. (d) SEM image of the suspended HCG.

Fig. 2. Calculated wavelength tuning curves of the designed detector-integrated VCSEL with a movable HCG.

Fig. 3. Measured P-I curve of the detector-integrated VCSEL with a movable HCG under CW operation at 25°C. The insets are captured under 0.4 mA and 0.8 mA, respectively.

Fig. 4. (a) Measured wavelength tuning spectra of the detector-integrated VCSEL with a movable HCG at different tuning voltages under continuous-wave operation at 1.0 mA. (b) Wavelength of the fundamental mode as a function of the tuning voltage.

Fig. 5. (a) Measured photocurrent and output power curves as a function of injection current of the detector-integrated VCSEL with a movable HCG. (b) Photocurrent-power curve of the detector-integrated VCSEL with a movable HCG.

Fig. 6. Measured photocurrents of the integrated n-i-p PD with the input from (a) external 960-nm semiconductor laser and (b) external 1062-nm semiconductor laser. Responsivities under different optical powers of (c) 960-nm semiconductor laser and (d) 1062-nm semiconductor laser.

Fig. 7. Measured photocurrent of the integrated n-i-p PD at different reverse-bias voltages under different input powers from the external 960-nm semiconductor laser.

Fig. 8. (a) Measured I-V curves of the detector-integrated VCSEL with a movable HCG under 940-nm incident light. (b) Measured relative responsivity of the detector-integrated VCSEL with a movable HCG under the zero bias voltage. The inset shows the spectrum of the device under continuous-wave operation at 1.2 mA.

Fig. 9. Fabrication process flowchart of the detector-integrated VCSEL with a movable HCG.

Fig. 10. (a) Schematic of the HCG structure. The HCG period is Λ, the bar width is a, and tg is the thickness of the HCG. Reflectivity spectra of (b) TE HCGs and (c) transverse magnetic (TM) HCGs under different periods and bar widths with a thickness of 140 nm. The simulations are performed with the rigorous coupled-wave analysis method.

Fig. 11. Schematic of the measurement setup for the wavelength tuning of the device.

Fig. 12. Simulated deformation of HCG under the reverse-bias voltage of 8 V.

Fig. 13. (a) Schematic cross section of the detector-integrated device before the HCG fabrication without an oxide aperture. (b) Infrared microscope image of the fully oxidized mesa. (c) Schematic cross section of the device before the HCG fabrication with an oxide aperture. (d) Infrared microscope image of the partially oxidized mesa.

Fig. 14. (a) Measured P-I curve of the 960-nm semiconductor laser at 25°C. (b) Spectra of the 960-nm laser under different injection current levels at 25°C.

Fig. 15. (a) Measured P-I curve of the 1062-nm semiconductor laser at 25°C. (b) Spectra of the 1062-nm laser under different injection current levels at 25°C.