Guangying Zhou, Yuejing Qi, Liang Li, Miao Jiang, Jiangliu Shi, Mingyi Yao. Robustness Analysis Method and Simulation Research of Alignment Mark[J]. Acta Optica Sinica, 2023, 43(11): 1113002
- Acta Optica Sinica
- Vol. 43, Issue 11, 1113002 (2023)
Fig. 1. Schematic diagram for layered processing of alignment mark
Fig. 2. Front view of AH53 mark
Fig. 3. 5th order diffraction efficiency at different harmonic numbers
Fig. 4. Curves of wafer quality and signal-to-noise ratio changing with groove depth. (a) Wafer quality;(b) signal-to-noise ratio
Fig. 5. Curves of wafer quality and signal-to-noise ratio changing with groove width. (a) Wafer quality;(b) signal-to-noise ratio
Fig. 6. Curves of wafer quality and signal-to-noise ratio changing with resist. (a) Wafer quality; (b) signal-to-noise ratio
Fig. 7. Curves of wafer quality and signal-to-noise ratio changing with oxide layer. (a) Wafer quality; (b) signal-to-noise ratio
Fig. 8. Schematic diagrams of sidewall deformation. (a) Sidewall angle;(b) sidewall of arc
Fig. 9. The influence of the number of layers on the calculation accuracy under different sidewall angles. (a) 120°; (b) 110°; (c) 100°
Fig. 10. The influence of number of harmonic on calculation accuracy under different sidewall angles
Fig. 11. Curves of wafer quality and signal-to-noise ratio changing with sidewall angle. (a) Wafer quality; (b) signal-to-noise ratio
Fig. 12. Schematic diagrams of sidewall of arc. (a) Sidewall of concave arc; (b) sidewall of convex arc
Fig. 13. Curves of wafer quality and signal-to-noise ratio changing with sidewall of concave arc. (a) Wafer quality; (b) signal-to-noise ratio
Fig. 14. Curves of wafer quality and signal-to-noise ratio changing with sidewall of convex arc. (a) Wafer quality; (b) signal-to-noise ratio
Fig. 15. Schematic diagram of asymmetric mark
Fig. 16. Comparison of simulation results of two methods
Fig. 17. Marked wafer quality measurement
Fig. 18. Cross section of mark
Fig. 19. Comparison between simulation results and experimental results
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Table 1. Wavelength and polarization state of incident light
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Table 2. Simulation results of asymmetric mark
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