• Journal of Infrared and Millimeter Waves
  • Vol. 40, Issue 6, 721 (2021)
Xing-Kai LANG1、2, Peng JIA1、2、*, Li QIN1、2, Yong-Yi CHEN1、2, Lei LIANG1、2, Yu-Xin LEI1、2, Yue SONG1、2, Cheng QIU1、2, Yu-Bing WANG1、2, Yong-Qiang NING1、2, and Li-Jun WANG1、2
Author Affiliations
  • 1State Key Laboratory of Luminescence and Application,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China
  • 2Daheng College,University of Chinese Academy of Sciences,Beijing 100049,China
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    DOI: 10.11972/j.issn.1001-9014.2021.06.003 Cite this Article
    Xing-Kai LANG, Peng JIA, Li QIN, Yong-Yi CHEN, Lei LIANG, Yu-Xin LEI, Yue SONG, Cheng QIU, Yu-Bing WANG, Yong-Qiang NING, Li-Jun WANG. 980 nm high-power tapered semiconductor laser with high order gratings[J]. Journal of Infrared and Millimeter Waves, 2021, 40(6): 721 Copy Citation Text show less
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    [9] K H Hasler, B Sumpf, P Adamiec et al. 5W DBR Tapered lasers emitting at 1 060 nm with a narrow spectral linewidth and a nearly diffraction limited beam quality. IEEE Photonics Technology Letters, 20, 1648-1650(2008).

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    [12] Y X Lei, Y Y Chen, F Gao et al. 996 nm high-power single-longitudinal-mode ta- pered gain-coupled distributed feedback laser diodes. Applied Optics, 58, 6426-6432(2019).

    Xing-Kai LANG, Peng JIA, Li QIN, Yong-Yi CHEN, Lei LIANG, Yu-Xin LEI, Yue SONG, Cheng QIU, Yu-Bing WANG, Yong-Qiang NING, Li-Jun WANG. 980 nm high-power tapered semiconductor laser with high order gratings[J]. Journal of Infrared and Millimeter Waves, 2021, 40(6): 721
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