Xing-Kai LANG, Peng JIA, Li QIN, Yong-Yi CHEN, Lei LIANG, Yu-Xin LEI, Yue SONG, Cheng QIU, Yu-Bing WANG, Yong-Qiang NING, Li-Jun WANG. 980 nm high-power tapered semiconductor laser with high order gratings[J]. Journal of Infrared and Millimeter Waves, 2021, 40(6): 721
- Journal of Infrared and Millimeter Waves
- Vol. 40, Issue 6, 721 (2021)
Fig. 1. (a)Schematic diagram of HOBGs MOPA semiconductor laser, (b) epitaxial layer structure of HOBGs MOPA semiconductor laser
Fig. 2. Reflection spectrum of HOBGs MOPA laser at different etch depths
Fig. 3. Transmission spectrum of HOBGs MOPA laser at different etch depths
Fig. 4. Loss spectrum of HOBGs MOPA laser at different etch depths
Fig. 5. Light power-current-voltage curve graph of HOBGs MOPA laser
Fig. 6. Optical spectrum of HOBGs MOPA device at 2.5 A
Fig. 7. The lateral far field patterns of HOBGs-MOPA laser. The far-field spot is shown in the figure.
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