As a kind of electromagnetic wave localized between metal and medium, surface plasmons is related to the collective oscillation of free electrons on the metal surface and has the characteristics of high-level localization and near-field enhancement. Therefore, an infrared narrow-spectrum enhanced imaging device is designed by using surface plasmon resonator. A single nanometer plasmon resonator is composed of two silver layers. The simulation results show that the resonator plays a narrow-spectrum absorption role in the infrared band. In the nanometer plasmon resonator, the absorption band is greatly enhanced by an electric field, and the undesired bands can be shielded at the same time. Such a narrow-spectrum CCD (Charge Coupled Device) is expected to be used in high-resolution imaging and daily infrared CCD, and the design demonstrates the commercial value of using a silicon-semiconductor CMOS (Complementary Metal Oxide Semiconductor) platform to fabricate near-infrared CCD with wavelengths around 800 nm.