[1] F Matsukura, Y Tokura, H Ohno. Control of magnetism by electric fields. Nat Nanotech, 10, 209(2015).
[2] D C Ralph, M D Stiles. Spin transfer torques. J Magn Magn Mater, 320, 1190(2008).
[3] M Yamanouchi, D Chiba, F Matsukura et al. Current-induced domain-wall switching in a ferromagnetic semiconductor structure. Nature, 428, 539(2004).
[4] A Chernyshov, M Overby, X Y Liu et al. Evidence for reversible control of magnetization in a ferromagnetic material by means of spin-orbit magnetic field. Nat Phys, 5, 656(2009).
[5] I M Miron, G Gaudin, S Auffret et al. Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer. Nat Mater, 9, 230(2010).
[6] H Ohno. Making nonmagnetic semiconductors ferromagnetic. Science, 281, 951(1998).
[7] T Dietl, H Ohno, F Matsukura et al. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors. Science, 287, 1019(2000).
[8] T Jungwirth, J Sinova, J Masek et al. Theory of ferromagnetic (III,Mn)V semiconductors. Rev Mod Phys, 78, 809(2006).
[9] K Sato, L Bergqvist, J Kudrnovsky et al. First-principles theory of dilute magnetic semiconductors. Rev Mod Phys, 82, 1633(2010).
[10] T Dietl, H Ohno. Dilute ferromagnetic semiconductors: Physics and spintronic structures. Rev Mod Phys, 86, 187(2014).
[11] T Jungwirth, J Wunderlich, V Novak et al. Spin-dependent phenomena and device concepts explored in (Ga,Mn)As. Rev Mod Phys, 86, 855(2014).
[12] D Chiba, F Matsukura, H Ohno. Electric-field control of ferromagnetism in (Ga,Mn)As. Appl Phys Lett, 89, 162505(2006).
[13] D Chiba, M Sawicki, Y Nishitani et al. Magnetization vector manipulation by electric fields. Nature, 455, 515(2008).
[14] M Sawicki, D Chiba, A Korbecka et al. Experimental probing of the interplay between ferromagnetism and localization in (Ga,Mn)As. Nat Phys, 6, 22(2010).
[15] D Chiba, A Werpachowska, M Endo et al. Anomalous Hall effect in field-effect structures of (Ga,Mn)As. Phys Rev Lett, 104, 106601(2010).
[16] H L Wang, X L Wang, P Xiong et al. Control of magnetism in dilute magnetic semiconductor (Ga,Mn)As films by surface decoration of molecules. Front Phys, 4, 9(2016).
[17] M Endo, D Chiba, H Shimotani et al. Electric double layer transistor with a (Ga,Mn)As channel. Appl Phys Lett, 96, 022515(2010).
[18] H L Wang, J L Ma, X Z Yu et al. Electric-field assisted switching of magnetization in perpendicularly magnetized (Ga,Mn)As films at high temperatures. J Phys D, 50, 025003(2017).
[19] H Ohno. A window on the future of spintronics. Nat Mater, 9, 952(2010).
[20] X L Wang, H L Wang, D Pan et al. Robust manipulation of magnetism in dilute magnetic semiconductor (Ga,Mn)As by organic molecules. Adv Mater, 27, 8043(2015).
[21] X L Wang, H L Wang, J L Ma et al. Efficiently rotating the magnetization vector in magnetic semiconductor via organic molecules. ACS Appl Mater Interfaces, 11, 6615(2019).
[22] Y Nishitani, D Chiba, M Endo et al. Curie temperature versus hole concentration in field-effect structures of Ga1–
[23] A H MacDonald, P Schiffer, N Samarth. Ferromagnetic semiconductors: moving beyond (Ga,Mn)As. Nat Mater, 4, 195(2005).
[24] K F Eid, B L Sheu, O Maksimov et al. Nanoengineered Curie temperature in laterally patterned ferromagnetic semiconductor heterostructures. Appl Phys Lett, 86, 152505(2006).
[25] L Chen, X Yang, F H Yang et al. Enhancing the Curie temperature of ferromagnetic semiconductor (Ga,Mn)As to 200 K via nanostructure engineering. Nano Lett, 11, 2584(2011).
[26] H L Wang, X Z Yu, S L Wang et al. Simultaneous measurements of magnetization and electrical transport signal by a reconstructed superconducting quantum interference device magnetometer. Rev Sci Instrum, 84, 086103(2013).
[27] V Novak, K Olejnik, J Wunderlich et al. Curie point singularity in the temperature derivative of resistivity in (Ga,Mn)As. Phys Rev Lett, 101, 077201(2008).
[28] P Nemec, V Novak, N Tesarova et al. The essential role of carefully optimized synthesis for elucidating intrinsic material properties of (Ga,Mn)As. Nat Commun, 4, 1422(2013).
