• Infrared and Laser Engineering
  • Vol. 45, Issue 5, 520002 (2016)
Li Ping1、2、3, Li Tao1、2, Deng Shuangyan1、2, Li Xue1、2, Shao Xiumei1、2, Tang Hengjing1、2, and Gong Haimei1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.3788/irla201645.0520002 Cite this Article
    Li Ping, Li Tao, Deng Shuangyan, Li Xue, Shao Xiumei, Tang Hengjing, Gong Haimei. Dark current analysis of mesa type In0.83Ga0.17As p-i-n photodiodes with different annealing treatment[J]. Infrared and Laser Engineering, 2016, 45(5): 520002 Copy Citation Text show less
    References

    [1] Shi Yanli, Guo Qian, Li Long, et al. Visible-extended InP/InGaAs wide spectrum response infrared detectors[J]. Infrared and Laser Engineering, 2015, 44(11): 3177-3180. (in Chinese)

    [2] MacDougal M, Geske J, Wang C, et al. Low dark current InGaAs detector arrays for night vision and astronomy[C]//SPIE, 2009, 7298(3F): 1-10.

    [3] Klem J F, Kim J K, Cich M J, et al. Mesa-isolated InGaAs photodetectors with low dark current [J]. Applied Physics Letters, 2009, 95: 0311121-0311123.

    [4] Jae-Hyung Jang, Student Member, Gabriel Cueva, et al. Metamorphic graded bandgap InGaAs-InGaAlAs-InAlAs double heterojunction P-i-I-N photodiodes[J]. Journal of Lightwave Technology, 2002, 20(3): 507-514.

    [5] Li Ping, Li Tao, Deng Shangyan, et al. Anneal treatment to improve the performance of extended wavelength In0.83Ga0.17As photodetectors[J]. Infrared Phys Technol, 2015, 71: 140-143.

    [6] Cheng Jifeng, Zhu Yaoming, Tang Hengjing, et al. Microcosmic damage mechanism of inductively couple plasma etching for InGaAs[J]. Infrared and Laser Engineering, 2013, 42(8): 2186-2189. (in Chinese)

    [7] Anne Rouvie, Jean-Luc Reverchon, Odile Huet, et al. InGaAs focal plane arrays developments at III-V lab[C]//SPIE, 2012, 8353(8): 1-12.

    [8] Li Y F, Tang H J, Li T, et al. Current-voltage characteristics of planar-type InGaAs infrared detectors[J]. Journal of Optoelectronics · Laser, 2009, 20(12): 1580-1583.

    [9] Zhou Yi, Chen Jianxin, Xu Qingqing, et al. Dark current analysis of long wavelength InAs/GaSb superlattice infrared detector[C]//SPIE, 2012, 8419(4): 1-7.

    Li Ping, Li Tao, Deng Shuangyan, Li Xue, Shao Xiumei, Tang Hengjing, Gong Haimei. Dark current analysis of mesa type In0.83Ga0.17As p-i-n photodiodes with different annealing treatment[J]. Infrared and Laser Engineering, 2016, 45(5): 520002
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