• Infrared and Laser Engineering
  • Vol. 45, Issue 5, 520002 (2016)
Li Ping1、2、3, Li Tao1、2, Deng Shuangyan1、2, Li Xue1、2, Shao Xiumei1、2, Tang Hengjing1、2, and Gong Haimei1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.3788/irla201645.0520002 Cite this Article
    Li Ping, Li Tao, Deng Shuangyan, Li Xue, Shao Xiumei, Tang Hengjing, Gong Haimei. Dark current analysis of mesa type In0.83Ga0.17As p-i-n photodiodes with different annealing treatment[J]. Infrared and Laser Engineering, 2016, 45(5): 520002 Copy Citation Text show less

    Abstract

    In order to study the dark current of the devices, in this paper, the dark current of In0.83Ga0.17As p-i-n photodiodes was analyzed. Extended wavelength In0.83Ga0.17As p-i-n photodiodes with mesa type configuration were fabricated by two different processes. The first process(device marked M135L-5) was: rapid thermal annealing (RTA) was performed after mesa etching. The second process(device marked M135L-3) was: RTA was performed before mesa etching. Dark current mechanisms for extended wavelength In0.83Ga0.17As p-i-n photodiodes with different device fabrication processes were studied by means of the current-voltage curves at different temperatures and bias voltages. In contrast to M135L-5, M135L-3 had a lower dark current at the same test temperature from 220 K to 300 K. The ratio of perimeter-to-area(P/A) was used to characterize the perimeter-dependent leakage current and the area-dependent leakage current. The results show that M135L-3 has a lower area-dependent leakage current. Activation energy of devices served as a method to estimate the dark current composition was extracted from current-voltage curves. The results indicate that the dark current of M135L-5 is dominated by diffusion current at reverse 0.01-0.5 V bias voltage and at 220-270 K. The dark current of M135L-3 is dominated by diffusion current at 250-300 K as well as dominated by generation recombination current and surface recombination current at reverse 0.01-0.5 V bias voltage and at 220-240 K. Meanwhile, the results of dark current fitting also show the same conclusions. The studies have shown that M135L-3 with annealing treatment and optimization process is better than M135L-5 for reducing dark current because the RTA decrease the bulk dark current.
    Li Ping, Li Tao, Deng Shuangyan, Li Xue, Shao Xiumei, Tang Hengjing, Gong Haimei. Dark current analysis of mesa type In0.83Ga0.17As p-i-n photodiodes with different annealing treatment[J]. Infrared and Laser Engineering, 2016, 45(5): 520002
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