• Chinese Optics Letters
  • Vol. 19, Issue 12, 121404 (2021)
Lingrong Jiang1、2、3, Jianping Liu1、2、3、*, Lei Hu1、2、3, Liqun Zhang1、3, Aiqin Tian1、3, Wei Xiong1、3、4, Xiaoyu Ren1、3, Siyi Huang1、2、3, Wei Zhou1、3, Masao Ikeda1、3, and Hui Yang1、2、3
Author Affiliations
  • 1Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 2School of Nano-tech and Nano-bionics, University of Science and Technology of China, Hefei 230026, China
  • 3Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, China
  • 4Nano Science and Technology Institute, University of Science and Technology of China, Hefei 230026, China
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    DOI: 10.3788/COL202119.121404 Cite this Article
    Lingrong Jiang, Jianping Liu, Lei Hu, Liqun Zhang, Aiqin Tian, Wei Xiong, Xiaoyu Ren, Siyi Huang, Wei Zhou, Masao Ikeda, Hui Yang. Reduced threshold current density of GaN-based green laser diode by applying polarization doping p-cladding layer[J]. Chinese Optics Letters, 2021, 19(12): 121404 Copy Citation Text show less
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    Lingrong Jiang, Jianping Liu, Lei Hu, Liqun Zhang, Aiqin Tian, Wei Xiong, Xiaoyu Ren, Siyi Huang, Wei Zhou, Masao Ikeda, Hui Yang. Reduced threshold current density of GaN-based green laser diode by applying polarization doping p-cladding layer[J]. Chinese Optics Letters, 2021, 19(12): 121404
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