• Chinese Optics Letters
  • Vol. 19, Issue 12, 121404 (2021)
Lingrong Jiang1、2、3, Jianping Liu1、2、3、*, Lei Hu1、2、3, Liqun Zhang1、3, Aiqin Tian1、3, Wei Xiong1、3、4, Xiaoyu Ren1、3, Siyi Huang1、2、3, Wei Zhou1、3, Masao Ikeda1、3, and Hui Yang1、2、3
Author Affiliations
  • 1Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 2School of Nano-tech and Nano-bionics, University of Science and Technology of China, Hefei 230026, China
  • 3Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, China
  • 4Nano Science and Technology Institute, University of Science and Technology of China, Hefei 230026, China
  • show less
    References
    [1] H. Wang, Y. Kawahito, R. Yoshida, Y. Nakashima, K. Shiokawa. Development of a high-power blue laser (445 nm) for material processing. Opt. Lett., 42, 2251(2017).
    [2] S. Nagahara. Three primary color LD module. SID Symp. Digest Tech. Papers, 48, 80(2017).
    [3] X. Liu, S. Yi, X. Zhou, Z. Fang, Z.-J. Qiu, L. Hu, C. Cong, L. Zheng, R. Liu, P. Tian. 34.5 m underwater optical wireless communication with 2.70 Gbps data rate based on a green laser diode with NRZ-OOK modulation. Opt. Express, 25, 27937(2017).
    [4] X. Huang, F. Yang, J. Song. Hybrid LD and LED-based underwater optical communication: state-of-the-art, opportunities, challenges, and trends. Chin. Opt. Lett., 17, 100002(2019).
    [5] L.-K. Chen, Y. Shao, R. Deng. Robust UOWC systems against bubble-induced impairments via transmit/receive diversities. Chin. Opt. Lett., 17, 100006(2019).
    [6] H. König, M. Ali, W. Bergbauer, J. Brückner, G. Brüderl, C. Eichler, S. Gerhard, U. Heine, A. Lell, L. Naehle, M. Peter, J. Ristic, G. Rossbach, A. Somers, B. Stojetz, S. Tautz, J. Wagner, T. Wurm, U. Strauss, M. Baumann, A. Balck, V. Krause. Visible GaN laser diodes: from lowest thresholds to highest power levels. Proc. SPIE, 10939, 109390C(2019).
    [7] E. Kioupakis, P. Rinke, C. G. Van de Walle. Determination of internal loss in nitride lasers from first principles. Appl. Phys. Express, 3, 082101(2010).
    [8] E. Kioupakis, P. Rinke, A. Schleife, F. Bechstedt, C. G. Van de Walle. Free-carrier absorption in nitrides from first principles. Phys. Rev. B, 81, 241201(2010).
    [9] D. Sizov, R. Bhat, C.-E. Zah. Optical absorption of Mg-doped layers and InGaN quantum wells on c-plane and semipolar GaN structures. J. Appl. Phys., 113, 203108(2013).
    [10] L. Jiang, J. Liu, L. Zhang, B. Qiu, A. Tian, L. Hu, D. Li, S. Huang, W. Zhou, M. Ikeda, H. Yang. Suppression of substrate mode in GaN-based green laser diodes. Opt. Express, 28, 15497(2020).
    [11] J. Simon, V. Protasenko, C. Lian, H. Xing, D. Jena. Polarization-induced hole doping in wide-band-gap uniaxial semiconductor heterostructures. Science, 327, 60(2010).
    [12] S. Li, M. E. Ware, J. Wu, V. P. Kunets, M. Hawkridge, P. Minor, Z. Wang, Z. Wu, Y. Jiang, G. J. Salamo. Polarization doping: reservoir effects of the substrate in AlGaN graded layers. J. Appl. Phys., 112, 053711(2012).
    [13] O. V. Khokhlev, K. A. Bulashevich, S. Y. Karpov. Polarization doping for III-nitride optoelectronics. Phys. Status Solidi A, 210, 1369(2013).
    [14] Z. Zhang, M. Kushimoto, T. Sakai, N. Sugiyama, L. J. Schowalter, C. Sasaoka, H. Amano. A 271.8 nm deep-ultraviolet laser diode for room temperature operation. Appl. Phys. Express, 12, 124003(2019).
    [15] K. Sato, S. Yasue, Y. Ogino, S. Tanaka, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki. Light confinement and high current density in UVB laser diode structure using Al composition-graded p-AlGaN cladding layer. Appl. Phys. Lett., 114, 191103(2019).
    [16] D. Zhao. III-nitride based ultraviolet laser diodes. J. Semicond., 40, 120402(2019).
    [17] Z. Li, J. Liu, M. Feng, K. Zhou, S. Zhang, H. Wang, D. Li, L. Zhang, D. Zhao, D. Jiang, H. Wang, H. Yang. Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth. Appl. Phys. Lett., 103, 152109(2013).
    [18] A. Tian, J. Liu, M. Ikeda, S. Zhang, Z. Li, M. Feng, K. Zhou, D. Li, L. Zhang, P. Wen, F. Zhang, H. Yang. Conductivity enhancement in AlGaN:Mg by suppressing the incorporation of carbon impurity. Appl. Phys. Express, 8, 051001(2015).
    [19] L. Hu, X. Ren, J. Liu, A. Tian, L. Jiang, S. Huang, W. Zhou, L. Zhang, H. Yang. High-power hybrid GaN-based green laser diodes with ITO cladding layer. Photon. Res., 8, 279(2020).
    [20] T. Yasuda, K. Yagi, T. Suzuki, T. Nakashima, M. Watanabe, T. Takeuchi, M. Iwaya, S. Kamiyama, I. Akasaki. Investigations of polarization-induced hole accumulations and vertical hole conductions in GaN/AlGaN heterostructures. Jpn. J. Appl. Phys., 52, 08JJ05(2013).
    [21] F. Bernardini, V. Fiorentini, D. Vanderbilt. Spontaneous polarization and piezoelectric constants of III-V nitrides. Phys. Rev. B, 56, R10024(1997).
    [22] M. Asif Khan, A. Bhattarai, J. N. Kuznia, D. T. Olson. High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction. Appl. Phys. Lett., 63, 1214(1993).
    [23] K. Kim, W. R. L. Lambrecht, B. Segall. Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN. Phys. Rev. B, 53, 16310(1996).
    [24] L. A. Coldren, S. W. Corzine, M. L. Mašanović. A phenomenological approach to diode lasers. Diode Lasers and Photonic Integrated Circuits(2012).
    [25] M. Kawaguchi, O. Imafuji, S. Nozaki, H. Hagino, S. Takigawa, T. Katayama, T. Tanaka. Optical-loss suppressed InGaN laser diodes using undoped thick waveguide structure. Proc. SPIE, 9748, 974818(2016).
    [26] H. Y. Ryu, K. H. Ha, J. K. Son, S. N. Lee, H. S. Paek, T. Jang, Y. J. Sung, K. S. Kim, H. K. Kim, Y. Park, O. H. Nam. Determination of internal parameters in blue InGaN laser diodes by the measurement of cavity-length dependent characteristics. Appl. Phys. Lett., 93, 011105(2008).
    [27] D. J. Kunzmann, R. Kohlstedt, T. Uhlig, U. T. Schwarz. Critical discussion of the determination of internal losses in state-of-the-art (Al, In)GaN laser diodes. Proc. SPIE, 11280, 112800Y(2020).
    [28] M. Kuramoto, C. Sasaoka, N. Futagawa, M. Nido, A. A. Yamaguchi. Reduction of internal loss and threshold current in a laser diode with a ridge by selective re-growth (RiS-LD). Phys. Status Solidi A, 192, 329(2002).
    [29] Z. Zhang, M. Kushimoto, T. Sakai, N. Sugiyama, L. J. Schowalter, C. Sasaoka, H. Amano. Design and characterization of a low-optical-loss UV-C laser diode. Jpn. J. Appl. Phys., 59, 094001(2020).
    [30] Z. Zhang, M. Kushimoto, M. Horita, N. Sugiyama, L. J. Schowalter, C. Sasaoka, H. Amano. Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes. Appl. Phys. Lett., 117, 152104(2020).
    [31] K. Sato, S. Yasue, Y. Ogino, M. Iwaya, T. Takeuchi, S. Kamiyama, I. Akasaki. Analysis of spontaneous subpeak emission from the guide layers of the ultraviolet-B laser diode structure containing composition-graded p-AlGaN cladding layers. Phys. Status Solidi A, 217, 1900864(2020).
    [32] T. Yasuda, K. Hayashi, S. Katsuno, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki, H. Amano. Polarization dilution in a Ga-polar UV-LED to reduce the influence of polarization charges. Phys. Status Solidi A, 212, 920(2015).