• Chinese Optics Letters
  • Vol. 19, Issue 12, 121404 (2021)
Lingrong Jiang1、2、3, Jianping Liu1、2、3、*, Lei Hu1、2、3, Liqun Zhang1、3, Aiqin Tian1、3, Wei Xiong1、3、4, Xiaoyu Ren1、3, Siyi Huang1、2、3, Wei Zhou1、3, Masao Ikeda1、3, and Hui Yang1、2、3
Author Affiliations
  • 1Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 2School of Nano-tech and Nano-bionics, University of Science and Technology of China, Hefei 230026, China
  • 3Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, China
  • 4Nano Science and Technology Institute, University of Science and Technology of China, Hefei 230026, China
  • show less

    Abstract

    Absorption induced by activated magnesium (Mg) in a p-type layer contributes considerable optical internal loss in GaN-based laser diodes (LDs). An LD structure with a distributed polarization doping (DPD) p-cladding layer (CL) without intentional Mg doping was designed and fabricated. The influence of the anti-waveguide structure on optical confinement was studied by optical simulation. The threshold current density, slope efficiency of LDs with DPD p-CL, and Mg-doped CL, respectively, were compared. It was found that LDs with DPD p-CL showed lower threshold current density but reduced slope efficiency, which were caused by decreasing internal loss and hole injection, respectively.
    σ=Ptotal=PspAlGaN+PpzAlGaNPspGaN,

    View in Article

    PpzAlGaN=2(e31c13c33e33)(aGaNaAlGaNaAlGaN),

    View in Article

    p=ΔσqΔd,

    View in Article

    p5.4×1013·ΔxΔdcm3,

    View in Article

    Jth=Jtrηiηinj·exp(αi+αmΓ2QWsg0),

    View in Article

    S.E.=hcqλ·αmαm+αi·ηiηinj,

    View in Article

    αm=12Lln(1R1R2),

    View in Article

    αi=Γ·α0.

    View in Article