Reduced threshold current density of GaN-based green laser diode by applying polarization doping p-cladding layer

Lingrong Jiang; Jianping Liu; Lei Hu; Liqun Zhang; Aiqin Tian; Wei Xiong; Xiaoyu Ren; Siyi Huang; Wei Zhou; Masao Ikeda; Hui Yang

doi:10.3788/COL202119.121404

Journals >Chinese Optics Letters >Volume 19 >Issue 12 >Page 121404 > Article

Chinese Optics Letters
Vol. 19, Issue 12, 121404 (2021)

Reduced threshold current density of GaN-based green laser diode by applying polarization doping p-cladding layer

Lingrong Jiang^1、2、3, Jianping Liu^{1、2、3、*}, Lei Hu^1、2、3, Liqun Zhang^1、3, Aiqin Tian^1、3, Wei Xiong^1、3、4, Xiaoyu Ren^1、3, Siyi Huang^1、2、3, Wei Zhou^1、3, Masao Ikeda^1、3, and Hui Yang^1、2、3

Author Affiliations

¹Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

²School of Nano-tech and Nano-bionics, University of Science and Technology of China, Hefei 230026, China

³Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, China

⁴Nano Science and Technology Institute, University of Science and Technology of China, Hefei 230026, China

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DOI: 10.3788/COL202119.121404 Cite this Article Set citation alerts

Lingrong Jiang, Jianping Liu, Lei Hu, Liqun Zhang, Aiqin Tian, Wei Xiong, Xiaoyu Ren, Siyi Huang, Wei Zhou, Masao Ikeda, Hui Yang. Reduced threshold current density of GaN-based green laser diode by applying polarization doping p-cladding layer[J]. Chinese Optics Letters, 2021, 19(12): 121404 Copy Citation Text

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