Recently, a high localized carrier extraction efficiency and increasing of absorption coefficient was observed in low-dimensional semiconductors within a PN junction. Such phenomenon provides the possibility of fabricating novel high performance quantum well interband transition detector. In this work, we report the performance of the first photon detector based on the interband transition of strained InGaAs/GaAs quantum wells. The external quantum efficiency of the device was measured to be 31% using an absorption layer with only 100nm effective thickness and without an anti-reflection layer. Using such high value of quantum efficiency, an absorption coefficient of 3.7×104 cm-1 is calculated, which is obviously larger than previously reported values. The results here demonstrate the possibility of fabricating high performance and low cost infrared photon detectors.