Guofeng Yang, Peng Chen, Shumei Gao, Guoqing Chen, Rong Zhang, Youdou Zheng. White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy[J]. Photonics Research, 2016, 4(1): 0017
- Photonics Research
- Vol. 4, Issue 1, 0017 (2016)
Fig. 1. Optical microscope image of the mask pattern designed.
Fig. 2. (a) Top-view and (b) cross-section SEM images of InGaN/GaN MQWs grown on a GaN microring structure.
Fig. 3. (a) CL spectra from different facets of an InGaN/GaN MQW microring. Monochromatic CL intensity images over a single MQW microring at wavelengths of (b) 445 and (c) 560 nm.
Fig. 4. Position dependence of the CL peak wavelength from the inner {1-100} plane to the top (0001) surface.
Fig. 5. Photo image of EL at a 50 mA forward drive current for the fabricated LED chip wafer. The inset shows the surface pattern image of a single LED chip.
Fig. 6. EL spectra of white LED with increasing injection current. The inset shows the I–V characteristics of the LED.
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