Researching | White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy

Journals >Photonics Research >Volume 4 >Issue 1 >Page 0017 > Article

Photonics Research
Vol. 4, Issue 1, 0017 (2016)

White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy

Guofeng Yang^1、2、*, Peng Chen², Shumei Gao¹, Guoqing Chen¹, Rong Zhang², and Youdou Zheng²

Author Affiliations

¹School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology,Jiangnan University, Wuxi 214122, China

²School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

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DOI: 10.1364/prj.4.000017 Cite this Article Set citation alerts

Guofeng Yang, Peng Chen, Shumei Gao, Guoqing Chen, Rong Zhang, Youdou Zheng. White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy[J]. Photonics Research, 2016, 4(1): 0017 Copy Citation Text

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References

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[8] Y. J. Lee, P. C. Lin, T. C. Lu, H. C. Kuo, S. C. Wang. Dichromatic InGaN-based white light emitting diodes by using laser lift-off and wafer-bonding schemes. Appl. Phys. Lett., 90, 161115(2007).

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Guofeng Yang, Peng Chen, Shumei Gao, Guoqing Chen, Rong Zhang, Youdou Zheng. White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy[J]. Photonics Research, 2016, 4(1): 0017

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